Applied Materials Israel Limited

Applied Materials, Inc.

Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Igor Petrov

Zvika Rosenberg

Pavel Adamec

Igor Krivts (Krayvitz)

Albert Karabekov

Guy Eitan

Dieter Winkler

Juergen Frosien

Dror Shemesh

Alon Litman

Yehuda Zur

Efim Vinnitsky

Asher Pearl

Igor Krivts

Eitan Kidron

Nadav Haas

Arie Bader

Yaron I Gold

Alex Goldenshtein

Radel Ben-Av

Igal Ben-Dayan

Oren Zoran

Igor Krayvitz

Ofir Arzouan

Bezalel Rechav

A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage

An objective lens arrangement that may include a magnetic lens and an electrostatic lens. The magnetic lens may include one or more coils, an upper polepiece and a lower polepiece. The electrostatic lens may include an upper electrode, an internal lower electrode and an external lower electrode. A majority of the internal lower electrode may be surrounded by a majority of the external lower electrode. The upper electrode, the internal lower electrode, and the external lower electrode are arranged in a coaxial relationship along an optical axis of the objective lens arrangement. An area of a bottom aperture of the external lower electrode may not exceed an area of a bottom aperture of the internal lower electrode.

Objective lens arrangement

A method for evaluating a specimen includes positioning a detector in an inserted position in which a first distance between a tip of the detector and a plane extending along a surface of the specimen is less than a distance between the plane and a tip of charged particle beam optics. While maintaining the detector at the inserted position, the surface of the specimen is scanned by a primary beam that exits from the tip of the charged particle beam optics. The detector detects x-ray photons and/or charged particles emitted or reflected from the specimen as a result of scanning the specimen with the primary beam. After completion of the scanning, the detector is positioned at a retracted position in which a second distance between the tip of the detector and the plane exceeds a distance between the tip of the charged particle beam optics and the plane.

Multi mode systems with retractable detectors

A retarding field scanning electron microscope for imaging a specimen is described. The microscope includes a scanning deflection assembly configured for scanning an electron beam over the specimen, one or more controllers in communication with the scanning deflection assembly for controlling a scanning pattern of the electron beam, and a combined magnetic-electrostatic objection lens configured for focusing the electron beam, wherein the objective lens includes a magnetic lens portion and an electrostatic lens portion. The electrostatic lens portion includes an first electrode configured to be biased to a high potential, and a second electrode disposed between the first electrode and the specimen plane, the second electrode being configured to be biased to a potential lower than the first electrode, wherein the second electrode is configured for providing a retarding field of the retarding field scanning electron microscope. The retarding field scanning electron microscope further includes a voltage supply being connected to the second electrode for biasing the second electrode to a potential and being in communication with the one or more controllers, wherein the one or more controllers synchronize a variation of the potential of the second electrode with the scanning pattern of the electron beam.

Charged particle beam device with dynamic focus and method of operating thereof

The present invention provides, according to a first aspect, a method for the examination of specimen with a beam of charged particles. The method provides one or more images of the specimen made with different view angles, so that, compared to a single image of the specimen, a lot of additional information about the specimen can be accessed. The different view angles (angles of incidence) are achieved by tilting the beam between the two images and moving the specimen to a new position so that the displacement of the beam caused by the tilting of the beam is compensated. Accordingly, while displaying/recording the second image the beam scans over the same area as it has scanned while displaying/recording the first image.

Method and system for the examination of specimen

A method and system for inspecting an inspected object. The system includes: a detector adapted to detect charged particles scattered from a sample; a magnetic lens adapted to generate a magnetic field such as to direct a charge particle beam towards a sample and an first electrode positioned very close to an inspected object, wherein the first electrode comprises a very thin portion that defines a narrow aperture through which the charged particle beam can propagate.

Charged particle beam system and a method for inspecting a sample

Wafer supporting apparatus, including an electrostatic chuck for supporting the wafer. The apparatus further includes an electrostatic shield which is positioned in proximity to the chuck and the wafer, and a voltage source which is coupled to apply an electric field between the chuck and the wafer. The voltage source applies one or more potentials to the electrostatic shield so as to prevent penetration of particles to the wafer.

Particle trap for electrostatic chuck

A inspection system includes: a lens arrangement adapted to generate a substantially symmetrical electrostatic field about an optical axis and to direct a primary electron beam towards an object that is oriented in relation to the optical axis at a non-normal angle; and at least on additional electrode, positioned outside the lens arrangement such as to increase symmetry of an electromagnetic field in the vicinity of an interaction point between the primary electron beam and the object. A method for inspecting an object includes: passing a primary electron beam, along an optical axis, through a substantially symmetrical electrostatic field defined within an electron lens arrangement; and propagating the primary electron beam from the lens arrangement towards an interaction point with an object that is oriented in relation to the optical axis at a non-normal angle, while maintaining, by at least one additional electrode positioned outside the lens arrangement, a substantially symmetrical electrical field in a vicinity of the interaction point.

Multiple electrode lens arrangement and a method for inspecting an object

A method and charged particle beam column are presented for directing a primary charged particle beam onto a sample. The primary charged particle beam, propagating along an initial axis of beam propagation towards a focusing assembly, passes through a beam shaper, that affects the cross section of the primary charged particle beam to compensate for aberrations of focusing caused by astigmatism effect of a focusing field produced by an objective lens arrangement of the focusing assembly, and then passes through a beam axis alignment system, that aligns the axis of the primary charged particle beam with respect to the optical axis of the objective lens arrangement.

Charged particle beam column and method for directing a charged particle beam

A method for discharging a sample, the method includes: determining whether to discharge a negatively charged area of a sample or to discharge a positively charged area of the sample; and injecting gas, via an electrode and gas supply component, or setting a first electrode to a first voltage and set the electrode and gas supply component to a second voltage, in response to the determination. A system including: a first electrode adapted to be set to at least a first potential; an electrode and gas supply component, adapted to be set to at least a second potential and to selectively supply gas to a vicinity of the sample; wherein at least one out of the first electrode and the electrode and gas supply component are positioned close to the sample.

Method and system for discharging a sample

A method and system are presented for directing a charged particle beam towards and away from a sample. The system comprises a lens arrangement having an electrode formed with a beam opening for a charged particle beam passage therethrough; and a magnetic deflector. The magnetic deflector has a magnetic circuit formed by a core part for carrying excitation coils and a polepieces part. The polepieces of the magnetic deflector are in electrical communication with the electrode of the lens arrangement and are electrically insulated from the other part of the magnetic circuit.

Beam directing system and method for use in a charged particle beam column

A method and system are presented for controlling inspection of a sample with a charged particle beam. A certain given voltage is supplied to an anode of the column to provide a required accelerating voltage for a charged particle beam. A certain negative voltage is supplied to the sample selected so as to provide a desirably high effective voltage of the column at said given voltage of the anode. A certain voltage is supplied an electrode of a lens arrangement located closer to the sample, this voltage being selected to satisfy one of the following conditions: the electrode voltage is either equal to or slightly lower than that of the sample; and the electrode voltage is significantly higher than that of the sample.

Charged particle beam column and method of its operation

A method and apparatus for use in monitoring a sample with a charged particle beam are presented. A mechanical displacement between a plane defined by the sample's surface and an optical axis defined by a beam directing arrangement is provided so as to orient the sample at a certain non-right anglewith respect to the optical axis. A primary charged particle beam propagating towards the sample is deflected so as to affect the trajectory of the primary charged particle beam to provide a certain non-zero anglebetween the primary beam propagation axis and said optical axis.

Method and system for use in the monitoring of samples with a charged particle beam

An objective lens arrangement is presented for mounting in a charged particle beam column adjacent to an anode tube that defines a beam drift space for a charged particle beam propagating towards a sample. The lens arrangement comprises a magnetic lens and an electrostatic lens, wherein the electrostatic lens includes upper and lower electrodes arranged in a spaced-apart coaxial relationship along an optical axis of the lens arrangement.

Objective lens arrangement for use in a charged particle beam column

A deflection system is presented for use in a lens arrangement of a charged particle beam column for inspecting a sample. The system comprises a magnetic deflector operable to create a magnetic field, and a pole piece assembly at least partly accommodated within the magnetic field. The pole piece assembly has a portion made of a soft magnetic material and is formed with an opening for a charged particle beam propagation therethrough. The deflection system allows for conducting the magnetic field created by the magnetic deflector through the pole piece assembly towards the opening in the pole piece assembly. This enables to increase the magnetic field value in the vicinity of the sample at the optical axis of the lens arrangement at a given electric current through the excitation coils of the magnetic deflector, without a need to increase a working distance.

Growing community of inventors

Holon, Israel

Igor Petrov