Infineon Technologies Richmond, LP

Igor Jekauc

William Roberts

Diem-Thy Ngu-Uyen Tran

Nicholas Clements

Karen Anne Davidson

Paul Jowett

Winifried Sabisch

A method for monitoring precision of placement of semiconductor wafers in a semiconductor processing apparatus includes measuring thickness of an insulating film on a surface of a semiconductor substrate before etching a portion of the insulating film from the surface of the semiconductor substrate. The method further includes re-measuring the thickness of the insulating film to determine etch rates for the film at selected locations on the surface of the semiconductor wafer, and based on the determined etch rates, determining misalignment of the semiconductor wafer.

Method and apparatus for monitoring precision of water placement alignment

A method of aligning a second layer to a first layer of a semiconductor structure by forming a first layer of a wafer having a distinguished feature via a first etching process that employs a first ionized gas generating machine. Forming a second layer having a circuit pattern via a second etching process that employs a second ionized gas generating machine, wherein the forming the second layer includes minimizing relative shifting between the distinguished feature located at an edge of the wafer for the first layer and the second circuit pattern located at the edge of the wafer for the second layer.

Method and device for minimizing multi-layer microscopic and macroscopic alignment errors

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Richmond, VA, United States of America

Igor Jekauc