Nxp USA, Inc.

Freescale Semiconductor,inc.

Igor Blednov

Jeffrey Kevin Jones

Kevin Kim

Olivier Lembeye

Youri Volokhine

Pascal Peyrot

A device includes a substrate and a package input terminal. The device includes a driver amplifier mounted to the substrate and configured to receive a radio frequency input signal. A first amplifier is mounted to the substrate. The first amplifier includes a first amplifier input terminal. A second amplifier is mounted to the substrate. The second amplifier includes a second amplifier input terminal. An inter-stage network is connected between the driver amplifier and the first amplifier and between the driver amplifier and the second amplifier. The inter-stage network includes a first capacitor connected between the driver amplifier and the first amplifier input terminal, and an inductor having a first terminal and a second terminal. The first terminal of the inductor is connected to the first capacitor. The inter-stage network includes a second capacitor connected between the second terminal of the inductor and the second amplifier input terminal.

Inter-stage network for radio frequency amplifier

The embodiments described herein provide wideband highly asymmetrical power efficient amplifier device that include a compact input power distribution network with input termination circuit. The input termination circuit is configured to provide control of the power distribution at the amplifier input. In one embodiment, the input termination circuit is configured to generate and reflect a frequency dependent portion of an input signal back toward the amplifier device inputs. This input reflection controls the input power distribution and shape of time domain input signal in a way that can affect amplifier device efficiency and linearity.

Amplifier devices with input line termination circuits

A coupling element for providing external coupling to a semiconductor die within an integrated circuit package. The coupling element comprises a flexible laminate structure comprising a flexible, electrically insulating substrate layer, a first conductive layer bonded to a first surface of the substrate layer, and a second conductive layer bonded to a second surface of the substrate layer. The coupling element is arranged to be coupled to the semiconductor die such that the first and second conductive layers are electrically coupled to electrical contacts of the semiconductor die. The coupling element is further arranged to extend through the integrated circuit package when electrically coupled to the semiconductor die, and for the first and second conductive layers to be further electrically coupled to at least one external component.

Coupling element, integrated circuit device and method of fabrication therefor

In a system comprising a plurality of gain elements configured in parallel to one another, a harmonically tuned filter provides an isolation circuit to prevent odd-mode differential oscillations. A harmonically tuned filter comprises resistors, inductors, and capacitors (RLC) to selectively allow one or more specific harmonics to pass through the isolation circuit to suppress the odd-mode oscillation. Direct current (DC) and other non-harmonically-related frequencies do not pass through the isolation circuit. Since the resistor is used to dissipate specifically the energy of the harmonic frequencies causing the odd-mode oscillation, the current density through the resistor is much lower than the current density of a typical odd-mode resistor without a harmonically tuned filter.

Frequency selective isolation circuit and method for suppressing parametric oscillation

Embodiments of a Doherty amplifier device are provided, including a first amplifier stage having a first gain; a second amplifier stage having a second gain that is less than the first gain; and an input power splitter coupled to inputs of the first and second amplifier stages, wherein the input power splitter includes either an inductive element, a capacitive element, or both coupled between the inputs of the first and second amplifier stages, and a resistive element coupled to the input of the second amplifier stage, the input power splitter respectively delivers first and second power levels to inputs of the first and second amplifier stages, and the resistive element is configured to tune gain linearity of the Doherty amplifier device by increasing the second power level to be greater than the first power level, based on a ratio of the second gain to the first gain.

Doherty input power splitter and linearization method

A two-way Doherty amplifier for amplifying a modulated or non-modulated carrier signal, said carrier signal having a carrier frequency; wherein the Doherty amplifier comprises a first amplifier having a first amplifier output node, a second amplifier having a second amplifier output node, a combining node connected or connectable to a load, a first amplifier output line connecting the first amplifier output node to the combining node, and a second amplifier output line connecting the second amplifier output node to the combining node, and wherein the first amplifier output line has an electrical length of substantially one quarter wavelength of the carrier signal and the second amplifier output line has an electrical length of substantially one half wavelength of the carrier signal.

Doherty amplifier

An amplification stage and a wideband power amplifier are provided. The amplification stage includes a stage input terminal, a stage output terminal, an amplifier, an input compensation network, and in output compensation network. At the stage input terminal is received a signal which is provided via the input compensation network to the amplifier. The input compensation network filters the signal to allow a wideband operation of the amplification stage around an operational frequency. The amplified signal provided by the amplifier is provided via the output compensation network to the stage output terminal. The output compensation network configured to allow a wideband operation of the amplification stage around the operational frequency with a minimal phase shift and distortion of amplitude and phase frequency response. The wideband power amplifier includes a plurality of amplification stage combined with transmission lines or their lumped element equivalents in a specific circuit topology.

Amplification stage and wideband power amplifier

A semiconductor die comprising a terminal structure for an active power device. The terminal structure comprises a metallic layer arranged to be electrically coupled between the active power device and an external contact of an integrated circuit package, a conductive sub-structure extending in parallel with the metallic layer, and located such that, when mounted within an integrated circuit device, the conductive sub-structure lies between the metallic layer and a reference voltage plane, and interconnecting elements extending between the metallic layer and the conductive sub-structure and electrically coupling the metallic layer to the conductive sub-structure. The plurality of interconnecting elements comprise first and second interconnecting elements extending between first and second lateral end regions of the metallic layer and the conductive sub-structure respectively such that the first and second interconnecting elements are laterally spaced with respect to the direction of travel of the fundamental signal for the active power device.

Terminal structure for active power device

A radio frequency power amplifier comprises an input and output terminals, a main and peak amplifier stages, and an output power combiner for combining a main output signal and a peak output signal into an output signal. The output power combiner comprises a first combiner terminal electrically coupled to a main output terminal, a second combiner terminal electrically coupled to a peak output terminal, a first transition structure extending from the first combiner terminal in a first direction to a first end, a second transition structure extending from the second combiner terminal in the first direction to a second end, a first electrical conductor arranged between the first and the second ends, and a second electrical conductor arranged between the second combiner terminal and the output terminal. The first electrical conductor extends in a second direction perpendicular to the first direction. The second electrical conductor extends in the first direction.

Radio frequency power amplifier

An RF power amplifier circuit has an input terminal for receiving an input signal having an input power, and an output terminal for outputting an output signal. The RF power amplifier circuit comprises three amplifier stages and an input power splitter for providing respective power fraction signals to respective inputs of each amplifier stage. The input power splitter comprises a first input transmission line arranged between a first node and a second node, a second input transmission line arranged between a third node and a fourth node, and an electrical reactive element having a first terminal electrically connected to both the first and the second nodes, and a second terminal electrically coupled to a third one of the respective three inputs.

Radio frequency power amplifier circuit

A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.

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Toulouse, France

Igor Blednov