Nxp B.v.

Koninklijke Philips Corporation N.v.

Ampleon Netherlands B.v.

Igor Blednov

Iouri Volokhine

Josephus Henricus Bartholomeus Van Der Zanden

Radjindrepersad Gajadharsing

Josephus H B Van Der Zanden

Alle Kornelis Vennema

An RF power device that includes a transistor with a compact impedance transformation circuit, where the transformation circuit includes a lumped element CLC analog transmission line and an associated embedded directional bilateral RF power sensor that is inductively coupled to the transmission line to provide detection of direct and reflected power independently with high directivity.

Power device and a method for controlling a power device

An electronic circuit has a multi-way Doherty amplifier. The multi-way Doherty amplifier comprises a two-way Doherty amplifier with a main stage and a first peak stage that are integrated in a semiconductor device; and at least one further peak stage implemented with a discrete power transistor.

Multi-way doherty amplifier

The present invention relates to an amplifier comprising a plurality of Doherty amplifier cells each Doherty amplifier cell comprising an input and an output respectively connected to an input and an output of the amplifier, a main amplifier stage, a peak amplifier stage and a signal combining circuit configured to combine signals from outputs of the main and peak amplifiers and provide a combined signal to the output of the Doherty amplifier cell. Each cell comprises a controllable splitter having an input (connected to the input of the Doherty amplifier cell. The controllable splitter is configured to receive a splitter control signal and modify an amplitude and phase of a signal at the input of the Doherty amplifier cell in response to the splitter control signal.

Doherty amplifier circuit

The invention relates to high power radiofrequency amplifiers, in particular to amplifiers having output impedance matching networks, exemplary embodiments of which include a radiofrequency amplifier having an active device mounted on a substrate within a device package, the amplifier having an output impedance matching network comprising a high pass network provided at least partly on the active device and a low pass network having a first inductive shunt connection between an output of the active device and a first output lead and a second inductive shunt connection between the output of the active device and a second output lead, wherein part of the second output lead forms an inductance contributing to the inductance of the low pass network.

Radiofrequency amplifier

An integrated radiofrequency amplifier with an operational frequency includes first and second Doherty amplifiers each having a main device, and a peak device connected at respective inputs and outputs by respective phase shift elements configured to provide a 90 degree phase shift at the operational frequency. An input of the amplifier is connected to the input of the main device of the first Doherty amplifier, an output of the amplifier is connected to the outputs of the peak devices of the first and second Doherty amplifiers and the input of the peak device of the first Doherty amplifier is connected to the input of the main device of the second Doherty amplifier by a phase shift element providing a 90 degree phase shift at the operational frequency.

A combination amplifier, in particular a Doherty amplifier allowing dynamic biasing, is provided, the combination amplifier comprising a first amplifier () having a first input terminal () and a first output terminal (); a second amplifier () having a second input terminal () and a second output terminal (); a first impedance inverter (Li,) connected between the first input terminal and the second input terminal; and an envelope detector () comprising a detector output terminal and a detector input terminal which is connected to the first output terminal.

Doherty amplifier

A bond wire circuit includes at least three bond wires arranged to split an input signal into two output signals. In connection with various example embodiments, bond wires are arranged in a generally parallel manner to mitigate magnetic coupling and related issues for splitting an input signal and providing each of split signals to an amplifier. The bond wires are connected by capacitive circuits that facilitate the splitting, and in some applications, additional capacitive (to ground/reference) and load circuits to further facilitate the splitting of the input signals for specific amplifier circuit implementations, and applications to various loads. In some implementations, the input signals are split in equal or arbitrary portions with frequency independent phase differences in a wide frequency band, with isolation between ports of the circuit.

Inductive circuit arrangement

A combination amplifier () is provided which comprises a carrier amplifier () and a series connection of a first peak amplifier () and a second peak amplifier () which are provided with a phase-shifted input signal relative to the input signal supplied to the carrier amplifier, wherein a transfer characteristics of the combination amplifier may be optimized by independently adjusting transfer characteristics of the carrier amplifier, the first peak amplifier and the second peak amplifier. Thereby, a linearity and/or an efficiency of the combination amplifier may be improved compared to a conventional Doherty amplifier.

Doherty amplifier with composed transfer characteristic having multiple peak amplifiers

The invention relates to an integrated Doherty amplifier with an input network connecting the input to the main stage and to the peak stage, and with an output network connecting the main stage and the peak stage to the output. The output network has a shunt capacitor to signal-ground in parallel to a parasitic capacitance of the main stage, and has a shunt inductor between the main stage and signal ground. The shunt configuration enables to use the MMIC Doherty amplifier in a wide frequency range. At least some of the inductors of the input network and/or output network are implemented using bond wires. Their orientations and locations provide minimal mutual electromagnetic coupling between the wires and the return RF current paths.

Integrated Doherty amplifier

A bond wire circuit includes bond wires arranged relatively to provide a selected inductance. In connection with various example embodiments, respective bond wire loops including forward and return current paths are arranged orthogonally. Each loop includes a forward bond wire connecting an input terminal with an intermediate terminal, and a return bond wire connecting the intermediate terminal to an output terminal. The return bond wires generally mitigate return current flow from the intermediate terminal in an underlying substrate. In some implementations, the loops are arranged such that current flowing in each of the respective loops generates equal and self-cancelling current in the other of the respective loops.

Inductive bond-wire circuit

A radio frequency power amplifier has first and second amplifier stages coupled in series, one of which is operated in class F and the other is operated in inverse class F; an envelope detector adapted to detect an envelope of the input signal; a power supply coupled to supply an electrical supply voltage to the first and second amplifier stages, wherein the electrical supply voltage is controlled to follow the envelope of the input signal. Such amplifier makes it possible to maintain class F and inverse class F operation, respectively, of the first and second amplifier stages independent on the input signal. Preferably, this is done by controlling the electrical supply voltage so that the saturation levels of the first and second amplifier stages follow the envelope of the input signal.

Power amplifier

An integrated HF-amplifier has an input bond pad, cells displaced in a first direction, and an output bond pad. Each has a amplifier with input pad, active area, and output pad. The active area is arranged in-between the input and output pads, and the input pad, active area, and output pad are respectively displaced in a second direction substantially perpendicular to the first direction. A first network interconnects input pads of adjacent cells, and extends in the first direction. A second network interconnects output pads of adjacent cells, and extends in the first direction. The first and second networks obtain an output signal at the output bond pad having for all interconnected cells an equal phase shift and amplitude for a same input signal at the input bond pad. At particular bias and phase shift conditions this provides a Doherty amplifier with improved efficiency at power back off.

High power integrated RF amplifier

The present invention relates to an integrated Doherty type amplifier arrangement and an amplifying method for such an arrangement, wherein a lumped element hybrid power divider () is provided for splitting input signals of main and peak amplifier stages () at predetermined phase shifts and non-equal division rates and at least one wideband lumped element artificial line (Z, Z) combined with wideband compensation circuit for receiving said first amplified signal and for applying said predetermined phase shift to said first amplified signal and its higher harmonics. Thereby, the low gain of the peak amplifier is compensated by providing the non-equal power splitting at the input. Moreover, the use of the lumped element hybrid power divider leads to an improved isolation between the input ports of the main and peak amplifiers decreasing final distortions of the output signal.

Integrated doherty type amplifier arrangement with high power efficiency

An integrated Doherty amplifier structure comprises an input bond pad (IBP), and an output bond pad (OBP). A first transistor (T) forms the peak amplifier stage of the Doherty amplifier and has a control input (G) to receive a first input signal (IS) being an input signal of the Doherty amplifier, and has an output (D) to supply an amplified first input signal (OS) at an output of the Doherty amplifier A second transistor (T) forms a main amplifier stage of the Doherty amplifier and has a control input (G) to receive a second input signal (IS) and has an output (D) to supply an amplified second input signal (S). The first input signal (IS) and the second input signal (IS) have a 90&#xb0; phase offset. A first bond wire (BW) forms a first inductance (L), and extends in a first direction, and is arranged between the input bond pad (IBP) and the control input (G) of the first transistor (T). A second bond wire (B W) forms a second inductance (L), and extends in the first direction, and is arranged between the output bond pad (OBP) and the output (D) of the first transistor (T). A third bond wire (B W) forms a third inductance (L) and extends in a second direction substantially perpendicular to the first direction, and is arranged between the output (D) of the first transistor (T) and the output (D) of the second transistor (T).

The present invention relates to an impedance transformation circuit (I) with a first contact pad () and a second contact pad () being spaced-apart and formed on a substrate (). The impedance transformation circuit comprises at least first circuit element () providing a contact area () formed on the substrate () which is arranged adjacent and between the first () and the second () contact pad. A first wire element () extends over the substrate () connecting the first contact pad () and a first end portion () of the contact area of the first circuit element (), whilst at least a second wire element () extends over the substrate () connecting the second contact pad () and a second end portion () of the contact area of the first circuit element (). The contact area of the first circuit element () is shaped such that it is provided a capacitive connection with a predetermined capacitance between the contact area and a fixed reference poteitial. The packing density of the whole circuit can advantageously be increased by having tibe first wire element () and the at least second wire element () the same shape and having them arranged substantially in parallel to each other and further, by having the first contact's pad () and the second contact pad () located at opposite sides of the contact area of the at least first circuit element (). Multiple impedance transformation circuits according to the invention can advantageously combined to a multi-coupled wire impedance transformation circuit ().

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Nijmegen, Netherlands

Igor Blednov