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Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Infineon Technologies Ag

Applied Materials, Inc.

Epcos Ag

Mattson Technology, Inc

Micronas Gmbh

Balzers Aktiengesellschaft

Asklepios Kliniken Verwaltungsgesellschaft Mbh

Ignaz Eisele

Harald Gossner

Lothar Risch

Karl Haberger

Martin Heigl

Wolfgang Werner

Erwin Hammerl

Zsolt Nenyei

Thorsten Knittel

Franz Wittmann

Hans J Pfleiderer

Karl Neumeier

Sabine Trupp

Gerhard Dorda

Thomas Werner Zilbauer

Jennifer Schmidt

Florian Wiest

Georg Roters

Ursula Ingeborg Schmidt

Bernhard Bullemer

Wolfgang Sittel

Alexandra Ludsteck

Jörg Schulze

Waltraud Dietl

Daniel Reiser

Walter Hansch

Christoph Fink

Jan Matusche

Rao Ramgopal

Hermann Baumgaertner

Andreas Beck

Josef Lechner

Bertrand Flietner

Markus Burgmair

Ekkehard Preuss

Gunter Freitag

Wahyu Widanarto

Oliver Senftleben

Christopher Senft

According to a further embodiment, a fluid sensor includes a fluid sensor element with a substrate including a recess for receiving a fluid to be examined, wherein the substrate surrounding the recess is formed, at least in parts, as a substrate electrode, an isolation layer arrangement between a floating gate electrode of a transistor and the substrate electrode and a sensor layer in the recess and adjacent to the floating gate electrode, an additional electrode at an opening area of the recess, wherein the additional electrode is arranged electrically isolated from the sensor layer, the substrate electrode and the floating gate electrode and is connected or connectable to a control potential and a processor configured to provide the control potential at the additional electrode such that an electric field between the additional electrode and the sensor layer is at least reduced or compensated during operation of the fluid sensor.

Fluid sensor

A method for detecting resistant germs in a sample includes contacting the sample by a sample carrier which has an agent for killing different germs. In addition, the method includes introducing the sample carrier into an analyzer and detecting light emissions from the sample carrier by the analyzer. An indication is output by the analyzer indicating that the sample contains at least one germ resistant to the agent for killing different germs, if the light emission exceeds a threshold value, or indicating that the sample does not contain germs resistant to the agent for killing different germs, if the light emission does not exceed the threshold value.

Method for recognizing resistant germs and device for performing same

Embodiments relate to a fluid sensor and a method for examining a fluid. A fluid sensor includes a substrate which comprises a recess for receiving a fluid to be examined, wherein the fluid sensor is implemented to detect electrical changes in the recess caused by the fluid to be examined.

Fluid sensor and method for examining a fluid

A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force.

Transistor structure, method for manufacturing a transistor structure, force-measuring system

A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time.

Hafnium oxide ALD process

The invention concerns a sensor with silicon-containing components from whose sensitive detection element electrical signals relevant to a present analyte can be read out by means of a silicon semiconductor system. The invention is characterized in that the silicon-containing components are covered with a layer made of hydrophobic material in order to prevent unwanted signals caused by moisture.

Sensor having hydrophobic coated elements

A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.

Method of forming and/or modifying a dielectric film on a semiconductor surface

A method for producing an electrically conductive structure on a non-planar surface includes depositing a photosensitive resist coating onto the non-planar surface, exposing the photosensitive resist coating, removing a portion of the photosensitive resist coating, and depositing an electrically-conductive material onto portions of the non-planar surface that is substantially free of the photosensitive resist coating.

Producing an electrically-conductive structure on a non-planar surface

A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type. The body zone is provided between the source zone and the drain zone. In each case at least a first and a second region of the second conductivity type are provided in a channel zone. The first region has a first doping concentration and the second region has a second doping concentration, which is lower than the first doping concentration. The combination of the two regions produces a semiconductor component threshold voltage greater than zero and the on resistance is lower than that merely due to a channel zone doped with the first or second doping concentration.

Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component

A three-transistor SRAM memory cell includes a bistable field-effect transistor having a fully depleted floating channel region and a hysteretic gate voltage characteristic curve. The bistable field-effect transistor has a gate to be connected to a first bit line for the purpose of writing to the memory cell and a second channel terminal to be connected to a second bit line for the purpose of reading from the memory cell. The two bit lines can be identical. The connection between the bit lines and the bistable transistor can be effected through first and second respective transistors which are each controlled by a respective word line.

SRAM memory cell

Microelectronic component and process for its production

Process for depositing a surface-wide layer through a mask and

A method for manufacturing an electrically conductive tip for field emission cathodes of vacuum electronic components includes forming the tip of doped silicon by molecular beam epitaxy of doped silicon through an opening of a mask and onto a substrate of monocrystalline silicon. The molecular beam epitaxy also produces a doped silicon layer on the surface of the mask.

Method for manufacturing a micro-electronic component having an

Vapor sources for vacuum evaporators in which the evaporation rate has hitherto been adjusted by varying the temperature of the vessel containing the evaporative substances, have a very large time constant, and an approximately exponential control characteristic. The invention substantially reduces the time constant in an effusion evaporator cell by providing that the rate is adjusted by means of a mechanical slide, preferably of boron nitride or graphite, placed in front of the vapor escape aperture or apertures of the evaporator vessel.

Effusion type evaporator cell for vacuum evaporators

A field effect transistor includes a semiconductor substrate of a first conductivity having a source zone and a drain zone of an opposite, second conductivity spaced apart therein and extending to the surface thereof. A surface channel adjoins the surface, is of the second conductivity, and extends in an area located between the source and drain zones. A gate electrode is carried above the surface channel, either on an insulator, or directly on the surface to form a Schottky junction. A second zone lies beneath the surface below or in overlapping relation to the surface channel and extends between the drain and source zones. The second channel is doped with dopant particles whose energy level in the forbidden band of the semiconductor substrate, at an operating temperature T, lies at a distance of more than 1/2 kT from the conduction band edge and valence band edge of the semiconductor substrate. Application of proper potentials with respect to the start voltage required for ionization of the dopant particles in the second channel causes the field effect transistor to function as a high-speed switch. Connection of the field effect transistor in series with a resistance between the poles of a power supply which has a voltage greater than the start voltage causes the field effect transistor to operate, in combination with the resistor, as an oscillator.

Field effect transistor having a surface channel and its method of

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Icking, Germany

Ignaz Eisele