Arizona State University

University of Houston System

Ignatius S Tsong

John Tolle

John Kouvetakis

Wei-Kan Chu

Chase K McMichael

Ki-Bui Ma

Quark Yung-Sung Chen

Mark Alan Lamb

Levi Torrison

Novel superhard dielectric compounds useful as gate dielectrics discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula HX&#x2014;O&#x2014;XH, wherein X is silicon or carbon with a compound comprising boron or nitrogen in a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.

Superhard dielectric compounds and methods of preparation

An isolation system for isolating a first object from vibrations from a second object. Such vibrations will have three orthogonal components, one oriented along a line between the objects, and two oriented 90.degree. apart in a plane normal to that line. The system includes three superconductor/magnet stages, each stage designed to extinguish one of the orthogonal components.

Vibration-free levitated platform

Growing community of inventors

Tempe, AZ, United States of America

Ignatius S Tsong