Lam Research Corporation

Ieva Narkeviciute

Bhadri N Varadarajan

Bo Gong

Guangbi Yuan

Kashish Sharma

Graphene is deposited on a metal surface of a semiconductor substrate at a deposition temperature compatible with back-end-of-line semiconductor processing. The graphene may be annealed at a temperature between the deposition temperature and a temperature sensitive limit of materials in the semiconductor substrate to improve film quality. Alternatively, the graphene may be treated by exposure to plasma with one or more oxidant species. The graphene may be encapsulated with an etch stop layer and hermetic barrier, where the etch stop layer includes a metal oxide deposited under conditions that do not change or that improve the film quality of the graphene. The graphene may be encapsulated with a hermetic barrier, where the hermetic barrier is deposited under conditions that do not damage the graphene.

Graphene integration

A doped or undoped silicon carbide (SiCON) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

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Portland, OR, United States of America

Ieva Narkeviciute