Applied Materials, Inc.

Ida Ariani Adisaputro

Ruiping Wang

Kwang-Soo Kim

Luke Zhang

A substrate having a patterned mask and exposed openings is provided in a process chamber having process electrodes. In a plasma ignition stage, a process gas is provided in the process chamber and is energized by maintaining the process electrodes at a plasma ignition bias power level. In an etch-passivating stage, an etch-passivating material is formed on at least portions of the substrate by maintaining the process electrodes at an etch-passivating bias power level. In an etching stage, the exposed openings on the substrate are etched by maintaining the process electrodes at an etching bias power level.

Method and apparatus for etch passivating and etching a substrate

A substrate,is placed in a process zone,of a process chamber,process gas is introduced into the process zone,and an energized gas is formed in the process zone,First process conditions are set to form etch-passivating deposits onto a surface,of the substrate,Second process conditions are set to etch the surface,of the substrate,The etch-passivating deposits formed before the etching process improve etching uniformity and reduce etch-rate microloading.

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Ida Ariani Adisaputro