Samsung Electronics Co., Ltd.

Boe Hydis Technology Co., Ltd.

Ick Hwan Ko

In Seo Kee

Hong Shik Shim

Young Gu Lee

Un Cheol Sung

Young Wook Ko

Kyo Woong Lee

Disclosed is a method of manufacturing a thin film transistor, in which a semiconductor layer and a gate insulating film may be formed through ink jet printing using a single bank, thereby simplifying the manufacturing process and decreasing the manufacturing cost, leading to more economical thin film transistors. The thin film transistor manufactured using the method of example embodiments may be used as a switching element for sensors, memory devices, optical devices, and active matrix flat panel displays.

Method of manufacturing thin film transistor including forming a bank for ink jet printing

Disclosed is a method for manufacturing an electrode of an electrochromic display. The method includes, prior to forming a porous nanoelectrode, forming a barrier rib for separating an electrolyte using a photosensitive paste as a material for the barrier rib, in which the photosensitive paste enables formation of patterns through a photolithographic process and maintains its shape at 450&#xb0; C. to 500&#xb0; C. The use of the electrode enables fabrication of an electrochromic display that is capable of preventing cross-talk between pixels and has advantages of fast response speed, prolonged lifespan upon repeated use and improved electrochromism, when compared to the case of metal oxide electrodes.

Method for manufacturing electrode for electrochromic display

Disclosed is a field emission display device which can prevent mixing of colors between the phosphor elements of the field emission display device. In the field emission display device, an upper substrate and a lower substrate are spaced apart with a predetermined gap and opposed to each other. Cathode assemblies are formed in a shape of stripes on the lower substrate. Anodes are formed on the upper substrate, and black matrices are formed on the anodes. The black matrices are disposed at locations respectively corresponding to every space between the cathode assemblies, so as to respectively have a shape of a partition. R, G, and B phosphor elements are formed in spaces between the black matrices, so as to respectively correspond to the cathode assemblies.

Field emission display device with minimal color cross-talk between two adjacent phosphor elements

Growing community of inventors

Seoul, South Korea

Ick Hwan Ko