Hitachi, Ltd.

Ichirou Sasaki

Toru Otsubo

Kazuhiro Ohara

Junzou Azuma

Mitsuo Tokuda

Yasuhiro Yamaguchi

Yasumichi Suzuki

Shinji Sasaki

Hirohisa Usuami

A plasma processing apparatus includes a plasma processing chamber having a stage for placing a substrate to be plasma processed, an exhaust port and a gas introduction nozzle for plasma processing coupled therewith, and a cavity resonator for closing the plasma processing chamber in vacuum manner and coupled through a microwave introducing window through which microwaves are introduced and having slots for radiating microwaves to the plasma processing chamber. Microwaves having increased intensity of an electromagnetic field is supplied to the processing chamber to produce plasma to effect processing of the substrate. An area in which diffusion of plasma is suppressed to reduce loss is formed only in the vicinity of an inner wall of the processing chamber.

Plasma processing method and apparatus using plasma produced by

A method of and apparatus removes foreign particles in a vacuum or in a dry atmosphere before and in continuation to performing a dry process, such as a dry etching or a sputtering process. For this purpose, the foreign particles are separated from a substrate by subjecting the foreign particles to a force for separating the foreign particles from the substrate and a vibrating force for vibrating the foreign particles at the same time, and then the frequency of vibration is changed to match the resonant frequency of a vibration system formed by each of the foreign particles and the substrate, thereby applying a vibration energy to the foreign particles due to resonance. The separated foreign particles floating in a plasma are drawn to an electrode having a potential which is controlled such that a flowing-in of electrons is reduced, and the particles are discharged from the inside of the plasma. In this way, the foreign particles can be reduced and the yield of the product in manufacturing semiconductors and TFTs can be promoted. Further, a cleaning step, a film forming operation, an etching process and the like can continuously be processed, thereby achieving a reduction in steps and a promotion in productivity.

Method of and apparatus for removing foreign particles

Plasma processing apparatus using plasma produced by microwaves

Disclosed is a plasma CVD apparatus and a method therefor, the apparatus comprising: a microwave generating portion; a coaxial cavity resonator for making a microwave supplied from the microwave generating portion resonate; a plurality of gas leading inlets provided in under portions of an axis of the cavity resonator and in peripheral wall portions of the cavity resonator for leading-in a supplied CVD gas; and a plasma generating chamber in which the CVD gas lead into the plasma generating chamber through the gas leading inlets and made to flow uniformly onto a surface of a substrate is subject to the microwave made intensive through resonance in the cavity resonator and radiated through a coupling plate so that uniform plasma is generated to thereby form a thin film on the surface of the substrate. Further disclosed is a plasma processing apparatus and a method therefor, the apparatus comprising; a plasma chamber for maintaining plasma generated in the inside of the plasma chamber so as to perform plasma processing; a first microwave accumulating and intensifying cavity resonance chamber connected with the plasma chamber through a first slot plate; a second microwave accumulating and intensifying cavity resonance chamber connected with the first cavity resonance chamber through a second slot plate parallel to the first slot plate; and a microwave generator for leading a microwave into the second cavity resonance chamber through a waveguide.

Processing apparatus and method for plasma processing

A plasma processing apparatus including a microwave generator, a waveguide for supplying microwaves generated by the microwave generator, a cavity resonator for resonating the microwaves supplied by the waveguide, and a plasma processing chamber. The plasma processing chamber is coupled to the cavity resonator for receiving resonated microwaves therefrom and for generating a plasma therein. The plasma processing chamber is provided with a stage for holding a substrate for plasma processing, and apparatus for introducing a plasma processing gas to the plasma processing chamber for exhausting gas therefrom. A separation plate separates the cavity resonator and the plasma processing chamber and enables resonated microwaves to be transmitted therethrough from the cavity resonator means to the plasma processing chamber. A slot plate functioning as an antenna is disposed in the cavity resonator in opposition to a surface of the substrate for enabling radiation of the resonated microwaves to the plasma processing chamber through the separation plate, the slot plate including at least one set of circumferentially extending slots for enabling radiation of resonated microwaves.

Growing community of inventors

Yokohama, Japan

Ichirou Sasaki