Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electrical Industrial Co., Ltd.

Ichiro Yamashita

Mamoru Takeda

Hiroyuki Hase

Shigeo Yoshii

Masayuki Wakamiya

Yukihiko Ise

Shinya Tokuono

Isamu Kitahiro

Masayuki Endo

Norihisa Mino

Noboru Nomura

Kiyoshi Morimoto

Tohru Nakagawa

Kiyoyuki Morita

Nozomu Matsukawa

Koichiro Yuki

Yoneharu Takubo

Kazuaki Nishio

Kiyoshi Araki

Kazuyasu Adachi

Shinya Kumagai

Mitsuhiro Okuda

Yoshito Miyatake

Michihito Ueda

Yoshihiro Gohara

Tsuyoshi Yoshino

Kazuyo Saito

Sadayoshi Hotta

Yoshihiro Watanabe

Kiyotaka Shiba

Katsumi Adachi

Yukihiro Nitta

Etsuya Takeda

Hiroya Kirimura

Masashi Kanno

Hideki Masumi

Tatsuhiko Tamura

Munehiro Morokuma

Takehiko Nakahara

Takashi Tsukada

Hideyuki Yoshimura

Masahiro Nunoshita

Yuki Murata

Yoshiyuki Mori

To provide a method of arranging ferritin by which a high rate of the number of the molecular film spots on which sole ferritin molecule was arranged in effect, with respect to total number of the molecular film spots provided for arranging ferritin (sole arrangement rate) is achieved is objected to. Specifically, in Fer8 ferritin having a sequence excluding 7 amino acids of from the second to the eighth, from an amino acid sequence (Fer0 sequence) translated from a naturally occurring DNA sequence, lysine at positionis substituted with glutamic acid.

Method of arranging ferritin and method of arranging inorganic particles

An object of the present invention is to obtain a zinc oxide-protein complex which can be a source of nanoparticles of zinc oxide utilizing a protein having a cavity inside thereof. The process for producing a zinc oxide-protein complex according to the present invention includes a hydrogen peroxide addition step for adding hydrogen peroxide so that the concentration would be 60 mM or greater and 150 mM or less to a buffer containing a protein having a cavity inside thereof such as ferritin, zinc ion, and ammonia.

Process for producing zinc oxide-protein complex

An object of the present invention is to provide a resistive nonvolatile memory element having an electric current path which can be realized by a simple and convenient process, and capable of allowing for micro-fabrication. The resistive nonvolatile memory element of the present invention includes first electrode, oxide semiconductor layerwhich is formed on the first electrodeand the resistance of which is altered depending on the applied voltage, metal nanoparticleshaving a diameter of between 2 nm and 10 nm arranged on the oxide semiconductor layer, tunnel barrier layerformed on the oxide semiconductor layerand on the metal nanoparticles, and second electrodeformed on the tunnel barrier layer, in which the metal nanoparticlesare in contact with the oxide semiconductor layer

Resistive nonvolatile memory element, and production method of the same

A method for selectively arranging ferritin modified with a peptide, which specifically binds to titanium, to titanium formed on a substrate surface is provided. The method for arranging ferritin of the present invention is characterized in that ferritin is selectively bound on titanium on a substrate by modifying the N-terminal part of ferritin with a peptide which specifically binds to titanium. Also, the method for arranging ferritin of the present invention is characterized in that selectivity for titanium can be markedly improved by adding a nonionic surface activating agent.

Method of arrangement of titanium-binding ferritin and inorganic particles

The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode.

Method for producing single electron semiconductor element

An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (FeOfine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.

Method of forming fine particle array on substrate and semiconductor element

To provide fine particle films including fine particles which are arranged at a high density in a highly accurate and regular manner is enabled. The fine particle film is a fine particle film including a substrate and plural number of protein fine particles which are arranged on the surface of the substrate in a plane direction parallel to the surface of the substrate, wherein each of the protein fine particles has plural number of first binding sites and one or more second binding sites respectively including a condensed amino acid, and each of the first binding sites binds to other first binding site carried by an adjacent fine particle while the second binding site binds to the substrate, wherein at least a part of the condensed amino acids constituting the second binding site are substituted.

Fine particle film and producing method of the same

A method for selectively arranging ferritin in a specified inorganic material part formed on a substrate is provided. The method for arranging ferritin of the present invention is characterized in that ferritin is selectively arranged on a part including titanium or silicon nitride (SiN) in an efficient manner by adding a nonionic surface active agent. Also, selective arrangement capability of ferritin can be markedly improved by modifying the N-terminus of ferritin with a certain peptide.

Method of selective arrangement of ferritin

A method for obtaining a cobalt-apoferritin complex according to the present invention includes: the step a) of preparing a solution including a Coion, a protein, a pH buffer agent and a Coassociating agent; and the step b) of adding an oxidizing agent to the solution and thereby making the protein contain a fine particle including cobalt.

Method for producing cobalt-protein complex

The method of the production of a nanoparticle of the present invention includes a step of forming a nanoparticle including a compound of ametal ion in a cavity part of aprotein, in a solution containing the protein having the cavity part therein, the metal ion, and a carbonate ion and/or a hydrogen carbonate ion. Examples of the aforementioned compound include e.g., a hydroxide. The aforementioned metal ion is preferably any one of a nickel ion (Ni), a chromium ion (Cr) or a copper ion (Cu). According to the aforementioned method, nanoparticles having a uniform particle diameter can be produced.

Method of production of nanoparticle and nanoparticle produced by the method of production

A nucleotide detectorincludes: metal particleshaving a size of the order of nanometers (diameter: about 6 nm) placed on a surface of a substrateat high density with high precision (with spaces of about 12 nm between adjacent particles); and single-stranded DNAs (thiol DNAs)having sulfur atoms at ends bonded to the gold particlesThe thiol DNAsare placed uniformly over the entire substrateat high density with high precision. Therefore, once a fluorescence-labeled single-stranded DNA is hybridized with any of the thiol DNAs, high fluorescence intensity is stably obtained. This detector is therefore usable as a high-performance DNA sensor with a high SN ratio.

Method for manufacturing a nucleotide detector

The method of the production of a nanoparticle of the present invention includes a step of forming a nanoparticle of a group II&#x2013;group VI compound semiconductor in the cavity part of a protein, in a solution containing the protein having a cavity part therein represented by apoferritin, the group II element ion represented by Cd and Zn, and the group VI element ion represented by S and Se. Preferably, the solution further includes an ammonium ion, and the supply of the group VI element ion (X) into the solution is conducted by adding HNCXNHto the solution. According to the aforementioned method, semiconductor nanoparticles having a uniform particle size can be produced.

Method of production of a nanoparticle of a compound semiconductor in a cavity of protein

The present invention relates to a precious metal-recombinant apoferritin complex produced by recombination technique, wherein the precious metal is gold (Au) or platinum (Pt), and wherein the residues of glutamic acid and aspartic acid in a channel of apoferritin complex are substituted with small polar amino acid residues or/and noncharged amino acid residues, e.g., serine, or/and with basic amino acid residues, e.g., lysine. The substitution prevents a repulsive force due to electrostatic interaction between a metal ion, e.g., (AuCl)that has a negative charge and a negative amino acid residue of the apoferritin, and facilitates the capture of (AuCl)into holding portion in the channel of said metal-recombinant apoferritin complex. The captured (AuCl)is subsequently reduced to Au, and thus the gold-recombinant apoferritin complex is produced.

Recombinant cage-like protein, method for producing the same, precious metal-recombinant cage-like protein complex, method for producing the same and recombinant DNA

A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of the production of a nanoparticle dispersed composite material of the present invention includes a step (a) of arranging a plurality of core fine particle-protein complexes having a core fine particle, which comprises an inorganic material, internally included within a protein on the top surface of a substrate, a step (b) of removing the protein, a step (c) of conducting ion implantation from the top surface of the substrate, and a step (d) of forming nanoparticles including the ion implanted by the ion implantation as a raw material, inside of the substrate.

Method of production of nano particle dispersed composite material

Growing community of inventors

Nara, Japan

Ichiro Yamashita