Nec Corporation

Nec Electronics Corporation

Mochida Pharmaceutical Co., Ltd.

Hodogaya Chemical Co., Ltd.

Renesas Electronics Corporation

Oki Electric Industry Co., Ltd.

Ichiro Yamamoto

Kazuo Kato

Hidenori Mochizuki

Yasushige Akada

Manabu Itoh

Naohiko Kimizuka

Toshihiro Iizuka

Kiyoshi Mizuguchi

Fumiaki Yamasaki

Yutaka Miyazaki

Shinichi Ogawa

Koji Watanabe

Ei Mochida

Eiji Hasegawa

Hiroyuki Fukuyama

Akihiro Imai

Yoshitake Kato

Naomi Fukumaki

Ikuo Kimura

Tadao Takahashi

Kazumi Nishijima

Kazuyuki Matsuura

Takafumi Mukaihira

Akihito Shimoi

Masato Shimojo

Kensuke Takano

Yasunobu Yumiya

Hitoshi Inaba

Kikuo Ohtomo

Tetsuyuki Nakase

Kazuhiro Suzuki

Takeshi Niho

A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer; forming a metal-containing film containing metal elements therein on the high-permittivity layer in a first region where the sacrifice layer is formed and a second region where no sacrifice layer is formed; introducing the metal elements into an interface between the interface insulating layer and the high-permittivity layer in the second region by conducting a heat treatment; and removing the sacrifice layer by wet etching, wherein in the removing step, the sacrifice layer is etched easily more than the high-permittivity layer. With this configuration, the semiconductor device excellent in reliability is obtained.

Method of manufacturing a semiconductor device

A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film formed on the first wafer; and (b) performing coating process including forming a high dielectric constant film on a second wafer; and achieving nitridation of the high dielectric constant film formed on the second wafer. The processing the wafer and the performing the coating process are carried out in the same reaction chamber. The coating process is carried out before the processing the wafer.

Method for depositing film and method for manufacturing semiconductor device

A P-type MOSFETincludes a semiconductor substrate (N-well); a gate insulating film formed on the semiconductor substrate, composed of a high-dielectric-constant filmwhich contains a silicate compound containing a first element selected from the group consisting of Hf, Zr and any of lanthanoids, together with N; a gate electrode formed on the gate insulating film, and is configured by a polysilicon filmcontaining a P-type impurity; and a blocking oxide filmformed between the gate insulating film and the gate electrode, blocking a reaction between the first element and the polysilicon film, and having a relative dielectric constant of 8 or above.

Semiconductor device

A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlZrO(0.05&#x2266;X&#x2266;0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.

Semiconductor device and method for manufacturing same

A semiconductor device is provided which is capable of improving its reliability by using a material having a high relative dielectric constant as a material for its gate insulating film, by suppressing degradation of an EOT (Equivalent Oxide Thickness) and by preventing crystallization of the material having a high relative dielectric constant. The semiconductor device (Field Effect Transistor) has a silicon substrate, a seed layer made up of silicon oxide, a gate insulating film made of amorphous hafnium aliminate and a gate electrode made up of polycrystalline silicon formed the gate insulating film. The gate insulating film is so formed that a hafnium concentration decreases monotonously or step by step, whereas an aluminum concentration increases monotonously or step by step along a direction of a thickness of the gate insulating film from the silicon substrate side toward the gate electrode. In a boundary region between a lower layer side region and an upper layer side region in the gate insulating film, the hafnium and aluminum concentrations change continuously.

A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlZrO(0.05&#x2266;x&#x2266;0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.

In a semiconductor device including at least one p-channel type MOS transistor, a silicon dioxide layer is formed on a silicon substrate, and a gate electrode is formed on the silicon dioxide layer. The gate electrode silicon has a three-layered structure including a silicon-seed layer formed on the silicon dioxide layer, a silicon/germanium layer formed on the silicon-seed layer, and a polycrystalline silicon layer on the silicon/germanium layer. An average grain size of polycrystalline silicon in the polycrystalline silicon layer is at most 100 nm, and p-type impurities are substantially uniformly distributed in the gate electrode along a height thereof, and the germanium atoms are diffused from the silicon/germanium layer into the silicon-seed layer at high density.

Semiconductor device including p-channel type transistor, and production method for manufacturing such semiconductor device

A compound represented by the following Formula (I):(wherein A represents oxygen atom or &#x2014;NR&#x2014; (Rrepresents hydrogen atom or lower alkyl group); Rrepresents nitro group, lower alkoxycarbonyl group, carbamoyl group unsubstituted or mono- or di-substituted by lower alkyl group, unprotected or protected hydroxyl group, unprotected or protected carboxyl group, lower alkyl group substituted by unprotected or protected hydroxyl group, or tetrazolyl group; and Rrepresents hydrogen atom, cyano group or lower alkylsulfonyl group, provided that when A is &#x2014;NR&#x2014;, it is excluded that Rrepresents unprotected or protected hydroxyl group or lower alkyl group substituted by unprotected or protected hydroxyl group) or its salt, and method for producing the compound, and a pharmaceutical composition containing the compound as active ingredient.

4-hydroxypiperidine derivatives having analgesic activity

A semiconductor device is provided which is capable of improving its reliability by using a material having a high relative dielectric constant as a material for its gate insulating film, by suppressing degradation of an EOT (Equivalent oxide Thickness) and by preventing crystallization of the material having a high relative dielectric constant. The semiconductor device (Field Effect Transistor) has a silicon substrate, a seed layer made up of silicon oxide, a gate insulating film made of amorphous hafnium aliminate and a gate electrode made up of polycrystalline silicon formed the gate insulating film. The gate insulating film is so formed that a hafnium concentration decreases monotonously or step by step, whereas an aluminum concentration increases monotonously or step by step along a direction of a thickness of the gate insulating film from the silicon substrate side toward the gate electrode. In a boundary region between a lower layer side region and an upper layer side region in the gate insulating film, the hafnium and aluminum concentrations change continuously.

4-hydroxypiperidine derivatives having antiarrhythmic activity

A p-channel type field effect transistor incorporated in a semiconductor device has a gate electrode on a gate insulating layer, and the gate electrode is constituted by an amorphous silicon layer on the gate insulating layer, a silicon-germanium layer on the amorphous silicon layer, a polysilicon layer on the silicon germanium layer, a barrier layer of silicon oxide on the polysilicon layer residue of a cap silicon layer on the barrier layer and a cobalt silicide layer on the residue; while heat is being applied, boron, which has been ion implanted into the polysilicon layer and active region on both sides of the gate electrode, is activated with the assistance of germanium, and the barrier layer blocks the boundary between the cap silicon layer and the cobalt layer from the germanium so that the cobalt silicide forms a continuous layer without any coagulation.

Semiconductor device having smooth refractory metal silicide layers and process for fabrication thereof

A semiconductor device in which a cell capacitor with an MIM or MIS structure is formed using a conductive material with a low resistivity for the upper electrode and a resistance element is formed using a conductive material with high resistance without increasing the complexity of the fabrication process. A plate electrode used for the upper electrode of the cell capacitor and for the resistance element is made by forming a three-layer structure including a low resistance conductive material layer, an insulating film layer on the low resistance conductive material layer, and a high resistance conductive material layer on the insulating film layer, patterning the three-layer structure in the same shape, and using the low resistance conductive material layer as the upper electrode of the cell capacitor and the high resistance conductive material layer as the resistance element.

Semiconductor device with improved peripheral resistance element and method for fabricating same

Growing community of inventors

Tokyo, Japan

Ichiro Yamamoto