Fujitsu Corporation

Kyushu Fujitsu Electronics Limited

Fujitsu Automation Limited

Ichiro Yamaguchi

Koki Otake

Michio Sono

Junichi Kasai

Masataka Mizukoshi

Masayuki Ochiai

Kazuhiko Mitobe

Yasuo Yamagishi

Nobuo Kamehara

Hidefumi Ueda

Susumu Abe

Masahiro Yoshikawa

Kazuto Tsuji

Yoshiyuki Yoneda

Toshio Hamano

Hideharu Sakoda

Yasuhiro Shinma

Yoshihiro Kubota

Masao Sakuma

Yoshihiko Ikemoto

Masaaki Seki

Joji Fujimori

Yukio Saigo

Naomi Miyaji

Yoshimi Suzuki

Michio Hayakawa

Lim Cheang Hai

Yutaka Yamada

Seiki Sakuyama

Tsuyoshi Aoki

Masashi Takenaka

Masanori Yoshimoto

Yuuji Watanabe

A method of forming a solder ball includes the steps of forming an electrode pad on a substrate, forming an insulating layer having a first opening at a position of the electrode pad, filling the first opening with solder paste that include solder and first resin, and applying a heating process to the solder paste so as to form a solder ball on the electrode pad and to form a cured resin member of the first resin across a border between the electrode pad and the substrate.

Formation of solder balls having resin member as reinforcement

A method of making a semiconductor device includes a resin film forming step for forming a resin film on a semiconductor substrate provided with electrode portions to cover the electrode portions an opening forming step for forming openings in the resin film at locations corresponding to the electrode portions a loading step for loading a bump material in the openings, a bump forming step for forming bumps in the openings by heating, and a removing step for removing the resin film.

Method of making semiconductor device

First and second ball forming plates are prepared. The cavities of the first plate and the cavities of the second plate are filled with solder paste, respectively. The first plate and the second plate are placed in a facing relationship to each other and heated to form metal balls each of which corresponds to the total metal components of the solder paste in one cavity of the first plate and one cavity in the second plate. The metal balls are formed in the cavities of the lower plate . The metal balls are transferred from the cavities of the first plate to a device on which bumps are to be formed.

Bump-forming method using two plates and electronic device

Method for forming solder bumps on a first member such as a semiconductor chip having electrode pads formed thereon. A flat plate having holes is prepared and the holes are filled with solder paste by squeezing. The flat plate is then overlapped with the first member with the flat plate above the first plate. The flat plate and the first member are heated to a temperature higher than the melting point of the solder alloy in the solder paste. Therefore, solder bumps having identical sizes and uniform structures can be obtained.

Method for forming solder bumps

First and second ball forming plates are prepared. The cavities of the first plate and the cavities of the second plate,are filled with solder paste, respectively. The first plate and the second plate are placed in a facing relationship to each other and heated to form metal balls each of which corresponds to the total metal components of the solder paste in one cavity of the first plate and one cavity in the second plate. The metal balls are formed in the cavities of the lower plate,. The metal balls are transferred from the cavities of the first plate to a device on which bumps are to be formed.

A method for fabricating a bump forming plate member by which bumps can be formed on an electronic component. A mask is formed on a surface of a crystalline plate, and the crystalline plate is subjected to anisotropic etching to form a plurality of grooves. The crystalline plate is also subjected to isotropic etching to deepen the grooves. The method can further includes additional anisotropic and isotropic etchings. Also, a method for fabricating a metallic bump forming plate member is disclosed. This method uses the above described crystalline plate having the grooves, and includes fabrication of a replica using the crystalline plate as an original, and fabrication of a metallic bump forming plate member using the replica as an original.

Method for fabricating bump forming plate member

A method for fabricating solder bumps onto a semiconductor chip. A solder ball forming member having a flat surface and a plurality of cavities arranged on the flat surface in a predetermined pattern is prepared. The cavities are then filled with a solder paste, and the solder ball forming member is heated to a temperature higher than the melting point of the solder so that the molten solder powder in the solder paste form solder balls due to surface tension. The semiconductor chip is then moved toward the solder ball forming member to transfer the heated solder balls from the solder ball forming member to the semiconductor chip.

Method for fabricating solder bumps by forming solder balls with a

A semiconductor device includes a semiconductor element, a semiconductor device base member having an element mounting portion on which the semiconductor element is mounted, external connection terminals provided on the semiconductor device base member and electrically connected to the semiconductor element, and a resin sealing the semiconductor element. The semiconductor device base member includes a base part and lead parts supported by the base part. The lead parts are electrically connected to the external connection terminals. The semiconductor device base member has bent portions in which the lead parts are located on outer sides of the semiconductor device base member. The bent portions are located in edge portions of the semiconductor device base member.

Method for producing a semiconductor device, base member for

A semiconductor device includes a board having a lower surface, a container part created in the board, external-connection nodes provided on the lower surface of the board, a supporting member provided inside the container part and secured by the board, a semiconductor chip secured on the supporting member and electrically connected with the external-connection nodes, and a sealing resin fully filling the container part so as to completely cover the semiconductor chip.

Semiconductor device and method of forming the device

A process for manufacturing semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

Process for manufacturing a packaged semiconductor having a divided

Semiconductor device, base member for semiconductor device and

A method for fabricating a semiconductor device using a solder ball forming plate having cavities. The plate is made from a silicon plate having a flat surface in a &lt;110&gt; crystallographic plane, and an orientation flat in a &lt;1-11&gt; crystallographic plane. The cavities are formed on the flat surface of the plate by etching, using a mask having openings in the shape of rhombus arranged such that one side of the rhombus is generally parallel to the &lt;1-11&gt; crystallographic plane. As a result, the cavities having wedge-shaped bottom are formed. The cavities are then filled with a solder paste and are heated to form solder balls in the cavities while the plate in an inclined position. The solder balls are then transferred from the plate to a semiconductor chip.

Process for forming solder balls on a plate having apertures using

A semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

Semiconductor device and lead frame therefore

A semiconductor device comprises a package body of a ceramic material formed with a stage region for supporting a semiconductor chip and an interconnection region used for external interconnection of the semiconductor device, a semiconductor chip mounted on the stage region of the package body by a layer of a resin that fixes the semiconductor chip on the stage region, an interconnection lead provided on the interconnection region of the package body for external connection of the semiconductor device, an interconnection wire connecting a bonding bad region of the semiconductor chip and the interconnection lead electrically, and a zone of modified surface texture formed on a surface of the package body at a part located between the semiconductor chip and the interconnection region, wherein the zone has a texture with increased density as compared to the rest of the package body.

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Kawasaki, Japan

Ichiro Yamaguchi