The United States of America As Represented by the United States

The United States of America As Represented by the Department of Energy

U.S. Department of Energy

Ichiro Takeuchi

Xiao-Dong Xiang

Hauyee Chang

Peter G Schultz

Chen Gao

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba Sr )TiO , where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba Sr )TiO and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO , the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO , the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Tungsten-doped thin film materials

A dielectric thin-film material for microwave applications, including use as a capacitor, the thin-film comprising a composition of barium strontium calcium and titanium of perovskite type (Ba,Sr,Ca,)TiO,. Also provided is a method for making a dielectric thin film of that formula over a wide compositional range through a single deposition process.

Low loss composition of BaxSryCa1-x-yTiO3: Ba0.12-0.25Sr0.35-0.47Ca0.32-0.53TiO3

A dielectric thin-film material for microwave applications, including use as a capacitor, the thin-film comprising a composition of barium strontium calcium and titanium of perovskite type (Ba.sub.x Sr.sub.y Ca.sub.1-x-y)TiO.sub.3. Also provided is a method for making a dielectric thin film of that formula over a wide compositional range through a single deposition process.

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Albany, CA, United States of America

Ichiro Takeuchi