Asahi Kasei Kogyo Kabushiki Kaisha

Asahi Kasei Kabushiki Kaisha

Other

Ichiro Shibasaki

Takeo Kimura

Kaoru Ohmura

Atsushi Okamoto

Hirotaka Geka

Muneaki Kimura

Kazuhiro Nagase

Yoshiyasu Sugimoto

Hidehiko Kobayashi

Naohiro Kuze

Takashi Yoshida

Kazutoshi Ishibashi

Nobuyoshi Imaoka

Tatsuro Iwabuchi

Etsuji Kakimoto

Takashi Ito

Kiyotaka Dohke

Akira Chiba

Ichiro Okada

Takashi Kajino

Yuichi Kanayama

Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlInSb mixed crystal layer formed on a substrate, and an InAsSb(0&#x3c;x&#x2266;1) thin film conducting layer directly formed on the AlInSb layer, in which the AlInSb mixed crystal layer is a layer that exhibits higher resistance than the InAsSbthin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAsSbthin film conducting layer, and the a lattice mismatch is +1.3% to &#x2212;0.8%.

Thin film lamination, thin film magnetic sensor using the thin film lamination and method for manufacturing the thin film lamination

The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer that is an InSb thin film formed on a substrate, and an AlGaInSb mixed crystal layer (0&#x2266;x, y&#x2266;1) which shows resistance higher than the InSb layer or insulation, or p-type conduction, and has a band gap larger than that of InSb. The mixed crystal layer is provided between the substrate and the InSb layer, and has a content of Al and Ga atoms (x+y) in the range of 5.0 to 17%.

InSb thin film magnetic sensor and fabrication method thereof

A solid material for a magnet, comprising a rare-earth/iron/nitrogen/hydrogen system magnetic material.

Solid material for magnet

An In Ga As Sb (0<x&lE;1, 0&lE;y&lE;1) thin film of an electron concentration of 2&times;10 /cm or more is formed on a dielectric substrate. Temperature dependence of resistance is controlled by composition setting or donor atom doping of the thin film to reduce the temperature dependence. As a result, a magnetic sensor of small temperature dependence of device resistance and high sensitivity can be provided.

Magnetic sensor, magnetic sensor apparatus, semiconductor magnetic resistance apparatus, and production method thereof

A magnetic sensor with a signal processing circuit includes a magnetic sensor section composed of a compound semiconductor thin film or a magnetic thin film, and a signal processing circuit for amplifying a magnetic signal the magnetic sensor section detects as an electrical output. The signal processing circuit includes an operational amplifier and a constant current circuit for carrying out feedback. The constant current circuit in the signal processing circuit includes a plurality of resistors with two or more different temperature coefficients, and the current output from the constant current circuit has a temperature coefficient inversely proportional to the temperature coefficient of the combined resistance of the plurality of the resistors.

Magnetic sensor with a signal processing circuit

Semiconductor sensors and method for fabricating the same

A field effect transistor including a first compound semiconductor layer (2) serving as a buffer layer, an InAs layer (3) serving as a channel layer, and a second compound semiconductor layer (4) serving as an electron donor layer or a barrier layer which are, in this order, deposited on a semiconductor substrate (1) having a lattice constant different from that of InAs. The first compound semiconductor layer (2) is formed from a material selected from AlGaAsSb, AlGaPSb, AlInAsSb and AlInPSb which are substantially in lattice matching with InAs and have a bandgap greater than that of InAs, and hence the first layer (2) has a simple structure. An FET having excellent high frequency characteristics can be obtained on the substrate (1) having a lattice constant different from that of the InAs layer (3).

Field effect transistor

Magnetoresistive sensor

An InAs thin film formed by epitaxial growth on an insulating or semi-insulating substrate has a structure in which a portion near the interface of the InAs thin film with the substrate is a lower electron mobility portion, and another portion more remote from that interface is a higher electron mobility portion. The thin film is doped with donor impurity atoms in at least the high mobility portion. A magnetoelectric transducer has the InAs thin film as a magneto-sensitive portion. A magnetic amplifying type magnetoelectric transducer has a body of a ferromagnetic material arranged in the vicinity of the magneto-sensitive portion.

Magnetoelectric transducer and process for producing the same

A magnetoelectric transducer comprising a group III-V compound semiconductor thin film 14 of 0.1 .mu.m to 10 .mu.m thickness formed as a magnetic field sensing portion on a substrate 12 overlaying an organic insulating layer 13, and a multilayer wire bonding electrode including an ohmic electrode 16 formed on a required area of the thin film and a hard metal layer 17 and a bonding layer 18 which are laminated on the ohmic electrode.

Magnetoelectric transducer

Magnetoresistive elements of ferromagnetic material having a high sensitivity and an excellent reliability have been manufactured. According to such an element, the sensitivity thereof can be enhanced by restricting the sheet resistance of wiring portions to a low value, and it is possible to prevent generation of an offset voltage due to a discrepancy in alignment by broadening the width of wiring portions at the connecting portions between magnetically sensitive members and the wiring portions to be wider than that of the magnetically sensitive members and arranging the connecting portions so as to be disposed in a geometrically symmetrical relationship therebetween. Such a structure is adapted for connecting the magnetically members and the wiring portions in a self-aligning manner.

Magnetoresistive element of ferromagnetic material and method of forming

An article for electrical use such as insulative substrates, electrical circuit borads and electrical elements, wholly or partly consisting out of an aromatic polyamide-imide having a reduced viscosity of from about 0.3 to 1.5, which polyamide-imide may contain a granular material dispersed therein, and a composition comprising 100 parts by weight of said polyamide-imide and additional about 100 to 4,000 parts by weight of a granular material and optionally about 10 to 10,000 parts by weight of a polar organic solvent.

Polyamide-imide compositions and articles for electrical use prepared

An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 - positions and having therein amide linkages and terminal groups unsubstituted or partially substituted with acrylate or methacrylate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.

Polymers for use in heat resistant photoresist composition and process

An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 -positions and having therein amide linkages and terminal groups partially substituted with cinnamate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.

Heat resistant photoresist composition and process for preparing the same

In a compound semiconductor device such as a magnetoresistance element or Hall element having a compound semiconductor portion such as of InSb and an electrode portion, a portion of the compound semiconductor portion is exposed to energy irradiation to be converted into an alloy state or amorphous state and rendered conductive to form the electrode portion. The portion rendered conductive is contiguous to and in ohmic contact with the unexposed portion of the compound semiconductor and used as a shorting bar electrode or an external lead bonding pad.

Growing community of inventors

Fuji, Japan

Ichiro Shibasaki