Ngk Insulators, Inc.

Ichiro Okazaki

Takuya Ishihara

Masahiro Murasato

Yasuhiro Horiba

Miho Kasahara

Yuki Tsuji

Minoru Imaeda

Yoshimasa Kondo

Kazuyuki Tahara

An outer peripheral surface of a cylindrical cell is coated with a heat insulation material. A heat-resistant material is stacked radially outside the heat insulation material. An electrical insulation material is stacked radially outside the heat-resistant material. The order in which the heat insulation material, the heat-resistant material and the electrical insulation material are stacked one on top of another may be changed. A coating material other than the heat insulation material, the heat-resistant material and the electrical insulation material may be provided.

Coated cell and module battery

A sodium-sulfur battery according to the present invention is provided with a reservoir spacethat retains and solidifies a high-temperature molten material having flowed out of a cell, in order to prevent the high-temperature molten material from leaking out of a casing, even when an accident occurs to generate the high-temperature molten material inside the casing. The reservoir spacecan be formed along a perimeter of the casing, or alternatively, can be formed inside the casing. The reservoir spaceincludes, for example, a composite memberof a rigid member, a heat-insulating material, and a heat-resisting material

Sodium-sulfur battery

There is provided a group III nitride crystal growth method capable of obtaining a material which is a GaN substrate of low defect density capable of being used as a power semiconductor substrate and in which characteristics of n-type and p-type requested for formation of transistor or the like. A growth method of group III nitride crystals includes: forming a mixed melt containing at least group III element and a flux formed of at least one selected from the group consisting of-alkaline metal and alkaline earth metal, in a reaction vessel; and growing group III nitride crystals from the mixed melt and a substance containing at least nitrogen, wherein after immersing a plurality of seed crystal substrates placed in an upper part of the reaction vessel in which the mixed melt is formed, into the mixed melt to cause crystal growth, the plurality of seed crystal substrates are pulled up above the mixed melt.

Method and apparatus for manufacturing group III nitride crystals

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Nagoya, Japan

Ichiro Okazaki