Casio Computer Co., Ltd.

Oki Electric Industry Co., Ltd.

Ichiro Ohno

Junji Shiota

Hiromitsu Ishii

Syunichi Sato

Hisatoshi Mori

Kunihiro Matsuda

Naohiro Konya

Hidetaka Uchiumi

Tsutomu Nomoto

Hideki Kamada

A plurality of address wiring layers and a plurality of data wiring layers are arranged to cross each other at a right angle. TFTs are respectively arranged at the intersections between the address wiring layers and the data wiring layers. The gate electrode of each TFT is connected to an address wiring layer for each row. The drain electrode of each TFT is connected to a data wiring layer for each column. Display electrodes are respectively arranged in the regions defined by the address wiring layers and the data wiring layers, and are connected to the source electrodes of the TFTs arranged in the respective regions. The data wiring layers and the source and drain electrodes of the TFTs each comprise the first layer serving as an ohmic barrier layer for a semiconductor layer, the second layer forming of a conductive material and serving as a main signal wiring layer, and the third layer serving as a battery reaction preventing layer.

LCD TFT drain and source electrodes having ohmic barrier, primary

A sputtering apparatus has a pressure resistant vessel, from which gas in discharged and into which gas for sputtering is supplied, a substrate disposed in the vessel to be formed with a film at one surface thereof, a target disposed oppositely to one surface of the substrate to be formed of a substance to become a material of the film, a magnet provided on the surface of the target oppositely to the substrate to generate a magnetic field for confining a plasma in the vicinity of the surface of the target opposed to the substrate, a plate-shaped anode disposed between the substrate and the target to be formed with an opening of the shape in which at least one side is larger than the profile of the substrate at a position opposed to the substrate, and a sputtering current supplier between the anode and the target. The anode is made of a conductor. An opening larger than the profile of the substrate is formed at a position of the anode opposed to the substrate.

Sputtering apparatus

A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.

Thin-film transistor having electrodes made of aluminum, and an active

A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.

Thin-film transistor and a liquid crystal matrix display device using

A method of forming a transparent conductive thin film by sputtering includes the step of placing a target consisting of a conductive oxide material and a substrate on which the thin film is to be formed in a pressure vessel, the step of supplying argon gas and oxygen gas after the pressure vessel is substantially evacuated, the step of supplying a sputtering current to the target to maintain a discharge state, the step of detecting the partial pressure of oxygen in the gas mixture in the pressure chamber, and the step of controlling the flow rate of oxygen gas. The flow rate of the oxygen gas is controlled by a control unit such that the value of the partial pressure of oxygen which is detected in the partial pressure detection step is always kept constant.

Growing community of inventors

Hachioji, Japan

Ichiro Ohno