Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Kao Corporation

Nec Corporation

Vlsi Technology Research Association

Sony Group Corporaton

Ichiro Mori

Soichi Inoue

Kazuyoshi Sugihara

Toshiaki Shinozaki

Toru Tojo

Yuichiro Yamazaki

Motosuke Miyoshi

Koji Hashimoto

Satoshi Tanaka

Toshiya Kotani

Haruo Okano

Keiji Horioka

Katsuya Okumura

Tadahito Fujisawa

Toru Watanabe

Hiroko Nakamura

Haruki Komano

Shunichi Sano

Tadahiro Takigawa

Mitsuyo Kariya

Shinichi Ito

Takashi Sato

Kenji Kawano

Takashi Sakamoto

Kentaro Ida

Hiroshi Nomura

Makoto Sekine

Takayuki Sakai

Iwao Higashikawa

Tatsuhiko Higashiki

Suigen Kyoh

Shingo Kanamitsu

Mitsuo Tabata

Yoshiyuki Shioyama

Takashi Hirano

Fumiaki Shigemitsu

Takuya Kouno

Hideo Kusakabe

Shunichi Akiba

Tsuyoshi Shibata

Takashi Itoi

Honoka Ozaki

Makoto Tsuji

Katsushi Maeda

Chikara Itoh

Karen Murata

Noboru Yokoya

Atsushi Miyagaki

Yuji Takigami

Satoshi Ishioka

Tooru Koike

Provided is an information processing device that includes a gaze point calculation unit, a depth calculation unit, a display generation unit, and a drive calculation unit. The gaze point calculation unit calculates a gaze point on a virtual image reflected on a half mirror. The depth calculation unit generates depth information related to a depth of the gaze point. The display generation unit generates a display object to be superimposed on the virtual image. The drive calculation unit drives a superimposition optical system of the display object so as to allow the display object to be observed as an image having a depth corresponding to the depth information.

Information processing device and information processing method

The present invention discloses a material for an absorbent article, the material having an organic hydrophobic antimicrobial agent and a hydrophilic non-volatile organic solvent. The material for an absorbent article is preferably manufactured by a method having a step of applying an antimicrobial agent solution to a material for an absorbent article, the antimicrobial agent solution being formed by dissolving an organic hydrophobic antimicrobial agent in a hydrophilic non-volatile organic solvent. The present invention also discloses an absorbent article in which the material for an absorbent article is used. The absorbent article is preferably manufactured by using a method having a step of making an absorbent core contain an antimicrobial agent solution formed by dissolving an organic hydrophobic antimicrobial agent in a hydrophilic non-volatile organic solvent.

Material for absorbent article, method for manufacturing same, and absorbent article using same

Provided are a novel &#x3b2;-glucuronidase inhibitor including a compound selected from a macrocyclic ketone, a ketone, a macrocyclic lactone, a macrocyclic oxalactone, an ester, an aldehyde, an alcohol, and a terpene of specific kinds, and an environmental hygiene product and a sanitary product each containing the &#x3b2;-glucuronidase inhibitor. Also provided are a composition for suppressing the generation of urine odor and a method of suppressing the generation of urine odor each using a &#x3b2;-glucuronidase inhibitor.

&#x3b2;-glucuronidase inhibitor

Disclosed is a method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit, predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process, obtaining an evaluation value by comparing the third pattern with the first pattern, determining whether the evaluation value satisfies a preset condition, and changing the process parameter information when the evaluation value is found not to satisfy the preset condition.

Method of setting process parameter and method of setting process parameter and/or design rule

A design system of an alignment mark for manufacturing a semiconductor device includes a memory which stores at least mark data including pattern information regarding plural kinds of marks and process data including condition information of manufacturing processes, and a first process simulator which simulates a substrate structure before patterning based on the process data, the substrate structure being formed in an identified manufacturing process. Moreover, the design system includes a second process simulator which simulates a processed shape of an identified mark after the patterning based on the simulated substrate structure and the process data, the mark formed in the manufacturing process, a signal waveform simulator which simulates a detection signal waveform of the mark, the waveform being obtained from the simulated processed shape of the mark, and a signal evaluation device which evaluates a suitability of the mark for the identified manufacturing process based on the simulated detection signal waveform.

Design system of alignment marks for semiconductor manufacture

A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.

Photomask repair method and apparatus

A control method for an exposure apparatus, in which an exposure amount and a focus value are set in transferring a circuit pattern on a mask onto a resist formed on a wafer by the exposure apparatus, includes the steps of arranging, on the mask, an exposure amount monitor mark and a focus monitor mark used to separately monitor the effective exposure amount and the focus value on the wafer, transferring the exposure amount monitor mark and the focus monitor mark onto the resist to form an exposure amount monitor pattern and a focus monitor pattern, measuring the states of the exposure amount monitor pattern and the focus monitor pattern at least at one of timings after exposure, after post exposure baking, during a cooling process after baking, during a process after cooling, during development, and after development, on the basis of the measurement results, calculating the difference between an optimum exposure amount value and an exposure amount set value set in the exposure apparatus and the difference between an optimum focus value and a focus set value set in the exposure apparatus in transferring the exposure amount monitor mark and the focus monitor mark onto the resist, and changing the focus set value and the exposure amount set value of the exposure apparatus in accordance with the calculated differences.

Control method for exposure apparatus and control method for semiconductor manufacturing apparatus

A method of manufacturing a semiconductor device, light is applied through the cell patterns made in master masks, thereby transferring the cell patterns to, and forming the cell patterns on, a wafer. On the basis of layout data representing a layout diagram of the semiconductor device, the pattern data of the device is divided along the boundaries of the function blocks of the device, generating pattern data items. Master masks are prepared in accordance with the pattern data items. Light is applied to the wafer, first through the master mask and then through the master mask. The cell patterns made in the master masks are transferred to the wafer.

Method of manufacturing a semiconductor device, method of manufacturing a photomask, and a master mask

A voice-input document creation system which reduces correction times to a wrongly-recognized input to ensure input efficiency. The system has a determination means for comparing the feature content of a newest voice input extracted by a feature extracting module with a feature content of an immediately preceding voice input to determine if the newest voice input is a correction to the immediately preceding voice input. When a first-time correction is received, the system displays a list of all output candidates for the immediately preceding voice input stored in a second memory. When a second-time correction is received, the system stores the output candidates for the newest voice input into a third memory and, at the same time, displays the output candidates; at this time, the system neither displays nor stores in the third memory those output candidates displayed upon the first-time correction.

Voice input word processor

An exposure monitor mask used with an exposure system for manufacturing ICs includes an exposure detecting pattern having at least three patterns arranged in one direction, the exposure detecting pattern including a pair of relative position detecting patterns with at least one variable intensity pattern that allows the intensity of light transmitted therethrough to vary monotonously in the one direction disposed between the pair of relative position detecting patterns.

Exposure monitor mask, exposure adjusting method and method of manufacturing semiconductor devices

According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.

Focused ion beam deposition using TMCTS

In a charged beam drawing apparatus for drawing a desired pattern on a sample by deflecting a charged beam on the sample while continuously moving a stage on which the sample is placed, a mark having a line-and-space pattern, in which a plurality of heavy metal marks each having a width equal to a side of the charged beam are arranged with spaces each equal to the width between them, is formed on the sample. The charged beam is radiated onto the mark while the position of the beam is fixed, and at the same time the stage is continuously moved in the longitudinal direction of the mark, thereby detecting a reflected beam from the mark. On the basis of the signal of the detected reflected beam, a relative vibration during the continuous movement of the stage is measured. This makes it possible to measure the relative vibration produced by the continuous movement of the stage, resulting in an increase in drawing accuracy.

Charged beam drawing apparatus

According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.

Method of repairing defect of structure

A method of transferring a micropattern onto a substrate includes the step of forming a multilayer film consisting of at least two layers on the substrate, the first exposing step of exposing the uppermost layer of the multilayer film through a first mask having a pattern equal to or larger than the micropattern, the step of positioning a second mask such that a main pattern thereof overlaps a transfer area of the uppermost layer of the multilayer film, the second mask having the main pattern corresponding to the micropattern and an auxiliary pattern arranged in the vicinity of the main pattern, and the second exposing step of exposing a layer other than the uppermost layer of the multilayer film through the second mask.

Micropattern forming method

Growing community of inventors

Yokohama, Japan

Ichiro Mori