Oki Electric Industry Co., Ltd.

Tokyo Ohka Kogyo Co., Ltd.

Other

Oki Semiconductor Co., Ltd.

Waseda University

Ichiro Koiwa

Akira Hashimoto

Yoshihiro Sawada

Juro Mita

Tetsuya Osaka

Takao Kanehara

Yukihisa Okada

Hiroyo Kato

Yoshinori Maeno

Kinya Ashikaga

Yoshimi Sato

Kazuhide Abe

Kozo Fujii

Daisuke Niwa

Yoshitaka Terao

Hideo Sawai

Naoyuki Shiozawa

Yoko Kajita

A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.

Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device

A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

Thin film capacitor, high-density packaging substrate incorporating thin film capacitor, and method for manufacturing thin-film capacitor

A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.

Hybrid memory device

A ferroelectric capacitor includes a bottom electrode, a ferroelectric layer formed on the bottom electrode, and a top electrode formed on the ferroelectric layer. A plurality of projection electrodes are formed on the bottom electrode.

Ferroelectric capacitor

A thin-film capacitor includes a lower electrode film, a high dielectric film and an upper electrode film disposed sequentially. One film of the three films includes first and second edge portions placed opposite to each other. Furthermore, the one film includes a first opening which extends from the first edge portion toward the second edge portion and a second opening which extends from the second edge portion toward the first edge portion. Also, the first and second openings are respectively terminated away from the second and first edge portions. Alternatively, one film of the three films includes a plurality of edge portions which configure an outline of the one film. Furthermore, the one film includes a plurality of openings which respectively extend therethrough and which are terminated away from all the edge portions. Also, there is provided a manufacturing method of the thin-film capacitor.

Thin-film capacitor including an opening therein

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film ( ), a ferroelectric capacitor ( ) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

COATING SOLUTIONS FOR USE IN FORMING BISMUTH-BASED FERROELECTRIC THIN FILMS, AND FERROELECTRIC THIN FILMS, FERROELECTRIC CAPACITORS AND FERROELECTRIC MEMORIES FORMED WITH SAID COATING SOLUTIONS, AS WELL AS PROCESSES FOR PRODUCTION THEREOF

An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr Ti Sb O (where 0 <x<1, 0.0001&lE;y&lE;0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.

Ferroelectric thin film, production method thereof and coating liquid for making thin film

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.

Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric memories formed with said coating solutions, as well as processes for production thereof

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (,), a ferroelectric capacitor (,) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof

Coating solutions for use in forming bismuth-based ferroelectric thin

An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0&lt;x&lt;1, 0.0001.ltoreq.y.ltoreq.0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.

Ferroelectric thin film, making method thereof and coating liquid for

Alkoxymetals, .beta.-diketones or metal acetates which are metal compounds corresponding independently to Bi, metallic element A (which is at least one member of the group consisting of Ca, Ba, Sr, Pb and Bi) and metallic element B (which is at least one member of the group consisting of Ti, Nb and Ta) are reacted with alcohols, carboxylic anhydrides, glycols, .beta.-diketones or dicarboxylic acid monoesters to prepare compounds for inclusion in coating solutions for use in forming Bi-based dielectric thin films. The coating solutions are used to produce dielectric thin films or memories.

Coating solutions for use in forming bismuth-based dielectric thin

A gas discharge panel with a plurality of electrically conductive oxide cathode electrodes and a plurality of anode electrodes that are arranged in a matrix in a sealed container. This electrically conductive oxide cathode electrode is formed using, for example, lanthanum chromite, lanthanum calcium chromite, alumina-doped zinc oxide, or antimony-doped tin oxide.

Growing community of inventors

Tokyo, Japan

Ichiro Koiwa