Applied Materials, Inc.

Ichiro Kawai

Yuji Maeda

Koji Nakanishi

Nobuo Tokai

On a wafer holding areaon the upper surface of a susceptora wafer W is supported by a wafer supportsuch that a gap with a predetermined distance is formed between the wafer W and a wafer heating surfaceA projectionthat decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surfaceAt this time, the heating condition for the wafer W by the susceptoris adjusted by means of the distances of the gaps at the respective portions of the wafer holding area. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

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Nanta, Japan

Ichiro Kawai