Matsushita Electric Industrial Co., Ltd.

Skyworks Filter Solutions Japan Co., Ltd.

Skyworks Panasonic Filter Solutions Japan Co., Ltd.

Ichiro Kameyama

Hiroshi Kagata

Junichi Kato

Tatsuya Inoue

Mitsuhiro Furukawa

Atsushi Takano

Tetsuya Uebayashi

Keiji Nishimoto

Fuyuki Abe

Kazunori Nishimura

Hiroshi Kushitani

Toru Sakuragawa

Hiroshi Fujinaka

Tomohiro Fujita

Tetsuya Furihata

Hidenori Uematsu

Kazushi Nishida

Kenichi Matsushima

Katsuya Fujii

An electronic component comprises a substrate including a main surface on which a functional unit is formed and a cap layer defining a cavity enclosing and covering the functional unit. The cap layer is provided with holes communicating an inside of the cavity with an outside of the cavity. A resin layer covers the cap layer and the main surface and includes one or more bores and a solder layer having a thickness less than a thickness of the resin layer disposed within the one or more bores.

Electronic package including cavity formed by removal of sacrificial material from within a cap

A method of manufacturing an electronic device includes preparing an electronic component including a first substrate on a main surface of which a functional unit and a first resin layer are formed. The first resin layer has a first surface facing the main surface of the first substrate, a second surface opposed to the first surface, a cavity on the first surface enclosing the functional unit, and a portion defining a wall of the cavity. The first resin layer defines a recess provided with a solder layer on the second surface. The method further includes preparing a second substrate having an electrode pad formed on a main surface, aligning the electronic component with the second substrate to layer the solder layer and the electrode pad in contact with the solder layer, and forming the electronic component and the second substrate into the electronic device.

Electronic package including cavity defined by resin and method of forming same

A method of fabricating an electronic component includes forming a functional unit on a main surface of a substrate, forming a sacrificial layer covering the functional unit on the main surface, forming a cap layer covering the sacrificial layer, the cap layer forming a periphery enclosing the cavity on the main surface, forming holes through the cap layer, forming a cavity by removing the sacrificial layer using a wet etching process through the holes, the holes including a peripheral hole communicating an inside of the cavity with an outside of the cavity along the main surface, and forming a first resin layer covering the cap layer and the main surface.

An electronic component may include a substrate having a functional unit formed on a main surface of the substrate and a first resin layer formed on the main surface, the first resin layer having a first surface facing the main surface and a second surface opposed to the first surface, the first resin layer defining a cavity on the first surface enclosing the functional unit, the first resin layer defining a recess on the second surface, and a solder layer being formed in the recess so as not to exceed the second surface in a thickness direction. The functional unit may include a surface acoustic wave (SAW) element or a film bulk acoustic resonator (FBAR) having a mechanically movable portion. The substrate may be formed of dielectric material.

An electronic component includes a substrate a functional section provided on the substrate, and a sealing body which is provided on the substrate and seals the functional section. In a temperature region having a lowest temperature that is at least as high as the glass transition temperature of the sealing body, the coefficient of linear expansion of the sealing body is greater than the coefficient of linear expansion of the substrate. In a temperature region having a highest temperature that is lower than the glass transition temperature of the sealing body, the coefficient of linear expansion of the sealing body is less than the coefficient of linear expansion of the substrate. The electronic component exhibits superior reliability even upon prolonged use.

Electronic component

An acoustic wave device includes a piezoelectric substrate, comb-shaped electrodes, wires, a sealing body, terminal electrodes, and connection electrodes. The comb-shaped electrodes are disposed on the piezoelectric substrate and are connected to the wires. The sealing body is disposed on the piezoelectric substrate in such a manner that the comb-shaped electrodes are sealed between the piezoelectric substrate and the sealing body. The terminal electrodes are disposed on the sealing body. The connection electrodes penetrate the sealing body so as to electrically connect the wires and the terminal electrodes, respectively. A first linear expansion coefficient in a first temperature range below a first glass transition temperature of the sealing body is larger than a second linear expansion coefficient in a second temperature range above the first glass transition temperature.

Acoustic wave device and sealing body contained therein

The present invention relates to a high frequency laminated component, which is used in a high frequency apparatus such as a radio communication apparatus, and its manufacturing method. An object thereof is to downsize the high frequency laminated component. To achieve the object, according to the high frequency laminated component of the present invention, dielectric layer () whose dielectric constant is lower than that of other areas is formed around via-hole electrode () in a dielectric. By forming dielectric layer () having a low dielectric constant, electric interference between via-hole electrode () and circuit electrode () is restrained, so that the circuit electrode and the via-hole electrode can be formed more closely each other compared with a conventional one. As a result, the high frequency laminated component can be downsized.

High frequency laminated component and its manufacturing method

An antenna duplexer capable of optimally decreasing the insertion loss and the voltage standing wave ratio (VSWR) at a center frequency and its vicinity in the pass band in transmitter-band of the device. The output port of transmitter surface-acoustic-wave (SAW) filter ( ) is electrically connected with phase shift circuit ( ), to which receiver SAW filter ( ) is also electrically connected. The transmitter and receiver SAW filters have different pass bands and attenuate the other pass band with each other. Phase shift circuit ( ) shifts the phase of receiver SAW filter ( ) in the transmitter-band. In addition, phase shift circuit ( ) has the characteristic impedance in which the magnitude of the reflection coefficient at the center frequency in the transmitter-band of receiver SAW filter ( ) is to be not less than 0.8 and the phase angle of reflection coefficient at the center frequency in the transmitter-band of receiver SAW filter ( ) takes the range from 0&deg; to 45&deg;.

SAW antenna duplexer having a phase shifter with less than 50 ohm characteristic impedance

A method of manufacturing a ceramic electronic component having a dielectric ceramic and a conductor containing Ag as a main component, wherein a dielectric resonator with a high Q value is produced by heat treating at 400.degree. C. or more in an atmosphere containing 10% or less by volume of oxygen after sintering the dielectric ceramic. Using a BaO--TiO.sub.2 --Nd.sub.2 O.sub.3 --Bi.sub.2 O.sub.3 based composition (.epsilon..sub.r =92, Qf=5000 GHz) as a dielectric, a coaxial type dielectric ceramic is produced by granulating calcined powder of the dielectric and then compacting the powder, followed by sintering. A dielectric resonator of .lambda./4 is produced by coating the dielectric ceramic with Ag paste at a position other than either the upper or lower side and then burning the paste. Thereafter, the electrodes(1,4) are formed by burning the paste at 400.degree. C. or more in an atmosphere containing 10% or less by volume of oxygen. The coaxial type dielectric resonator accepts electromagnetic waves from the open end and obtains output by utilizing TEM mode.

Method of manufacturing a ceramic electronic component

This invention provides a dielectric ceramic composition which has a high dielectric constant and a high Q value, and also has lower temperature coefficient of resonance frequency. The dielectric ceramic composition is attained by sintering composition which comprises a first component from 40 to 98 wt % and a second component from 2 to 60 wt %. The first component is represented by the following formula,

Dielectric ceramic compositions

The dielectric composition according to the present invention is used in a microwave band and is characterized in having a low sintering temperature and a property to be controllable independently in the respect of a dielectric constant and a temperature coefficient of the resonant frequency. The dielectric composition is represented by the formula:

Composition of dielectric ceramics

Dielectric ceramics a microwave device made of (Bi.sub.2 O.sub.3).sub..times. (Nb.sub.2 O.sub.5).sub.1-x includes at least one of subcomponents of CuO and V.sub.2 O.sub.5, wherein the composition ratio x is fallen into a range of 0.48.ltoreq..times..ltoreq.0.51, an atomic ratio AR1 defined by the following equation:

Dielectric ceramic for use in microwave device, a microwave dielectric

A dielectric ceramic composition which consists essentially of bismuth oxide, calcium oxide and niobium oxide, wherein when the dielectric ceramic composition is expressed by a formula xBiO.sub.3/2 -yCaO-zNbO.sub.5/2 and the x, y and z are plotted in a ternary system diagram so as to total 1.0, the x, y and z fall in a region enclosed by a pentagon having the following vertexes A, B, C, D and E,

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Katano, Japan

Ichiro Kameyama