Seiko Epson Corporation

Other

Cambridge Display Technology Limited

Ichio Yudasaka

Masahiro Furusawa

Tatsuya Shimoda

Hideki Tanaka

Shunichi Seki

Piero Migliorato

Mitsutoshi Miyasaka

Hiroshi Kiguchi

Takashi Aoki

Hiroo Miyajima

Sadao Kanbe

Wakao Miyazawa

Satoshi Inoue

Satoru Miyashita

Yasuo Matsuki

Yasumasa Takeuchi

Tsutomu Miyamoto

Mitsuru Sato

Takashi Masuda

Richard Henry Friend

Karl Pichler

Satoshi Takenaka

Basil Lui

Minoru Matsuo

Takashi Inoue

Carl R Towns

Julian Charles Carter

Stephen Karl Heeks

Mutsumi Matsuo

Yasuaki Yokoyama

Hideo Shimamura

Hermann F Wittman

Kiyohiko Kanai

Katsumi Nagase

Masami Miyasaka

Syunichi Seki

A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.

Method of manufacturing photoelectric conversion device, and method of manufacturing image display

Photoelectric conversion device, image display, method of manufacturing photoelectric conversion device, and method of manufacturing image display

In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.

Active matrix display device

Display devices such as EL elements or LED elements, are formed from thin film elements having banks of prescribed height and a thin film layer formed by an ink jet method in areas to be coated that are partitioned by those banks. The banks may be formed of an organic material on a bank formation surface configured of an inorganic material, plasma treatment is performed under conditions that the induction gas is fluorine-based and that fluorine is present excessively, and the areas enclosed by the banks subjected to surface treatment are filled with the liquid thin film material to form the thin film layer or layers.

Method of forming thin film patterning substrate including formation of banks

The current society can be referred to as a card society, since people can use various types of cards for a variety of applications. However, card users must always carry a number of cards depending upon the application, and must use different cards according to the purpose, which can bother such users. A memory of an IC chip of an IC card includes a fingerprint information area to verify the identity of a card owner, a personal information area in which personal information of the card owner is classified and recorded with different security levels set up, a company information area in which each company writes information of the company using an 'encryption key' unique to the company, and a public organization information area in which each public organization writes information of the public organization using an 'encryption key' unique to the public organization.

Recording medium, recording medium reading/writing apparatus, and method of using recording medium

A method for manufacturing a semiconductor device includes: forming a lower gate electrode over a substrate; forming a sacrifice film over the substrate such that the lower gate electrode is overlapped with the sacrifice film; forming a semiconductor film over the sacrifice film such that the semiconductor film crosses over the lower gate electrode; removing the sacrifice film; forming a lower gate insulating film in an empty space between the lower gate electrode and the semiconductor film, the empty space being obtained by removing the sacrifice film; forming an upper gate insulating film over the semiconductor film; and forming an upper gate electrode over the upper gate insulating film, the upper gate electrode being electrically connected to the lower gate electrode.

Method of manufacturing semiconductor device, semiconductor device and electronic apparatus therefore

A slit forming process with respect to a coated film, includes:

Method of forming a coated film, method of forming an electronic device, and method of manufacturing an electron emission element

A method for manufacturing a photoelectric transducer, comprising: forming a first electrode on a substrate; forming a first conductivity-type semiconductor layer on the first electrode; forming an I type semiconductor layer on the first conductivity-type semiconductor layer; forming on the I type semiconductor layer a second conductivity-type semiconductor layer that is different from the first conductivity-type; and forming a second electrode on the second conductivity-type semiconductor layer, wherein the forming of the I type semiconductor layer includes: forming a precursor film of the I type semiconductor layer on the first conductivity-type semiconductor layer by arranging droplets containing a silicon compound in an island shape; and converting the precursor film into the I type semiconductor layer by carrying out heat treatment or photoirradiation treatment to the precursor film.

Method for manufacturing photoelectric transducer, and electronic apparatus

A wiring substrate includes a substrate, a first film, and a second film formed between the substrate and the first film, and an empty space is formed between at least a part of the second film and the substrate.

Wiring substrate, electro-optic device, electric apparatus, method of manufacturing wiring substrate, method of manufacturing electro-optic device, and method of manufacturing electric apparatus

A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.

Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device

An etching method of the invention includes arranging droplets including a film-forming material on a substrate, drying each of the droplets to form a dry film having a width smaller than the diameter of each droplet at the time of the arrangement, and performing etching while using the dry film as an etching protective film.

Method of manufacturing a wiring substrate, method of manufacturing an electro-optical device, method of manufacturing an electronic apparatus

Exemplary embodiments of the present invention provide a method of manufacturing a semiconductor device that can take a connection between layers without giving damage to a layer, which is underlying. The semiconductor device includes forming conductive members Ms and Md at a predetermined position of a semiconductor film, forming an insulating film on a whole surface of a substrate excluding the conductive members Ms and Md, and forming a conductive film that is connected to the semiconductor film with the conductive member Ms and Md.

Method of manufacturing a semiconductor device and electronic equipment

A simple method of manufacturing a semiconductor device including a thick and dense insulator layer having a uniform film thickness includes forming the insulator layer by repeatedly applying a liquid material to a conductive layer plural times.

Method of manufacturing semiconductor device

Growing community of inventors

Chino, Japan

Ichio Yudasaka