Samsung Electro-mechanics Co., Ltd.

Ic Seob Kim

Soo Hwan Son

Sung Yong An

Myeong Gi Kim

Jin Woo Hahn

Byeong Cheol Moon

So Yeon Song

Ho Yoon Kim

Yong Sung Kim

Young Il Lee

Hae In Kim

Jung Il Kim

Sung Lyoung Kim

Tae Young Kim

Chang Hak Choi

San Kyeong

Min Kyoung Cheon

Kyung Ryul Lee

Yu Jin Choi

Soung Jin Kim

Hyo Soon Shin

Young Soo Yi

Kun Ho Koo

Soon Mo Song

Su Rim Bae

Eun Ju Oh

Ho Yeol Lee

Jeong Wook Kim

Dong Sook Sinn

Kyeong Ho Kim

A conductive paste includes: conductive powder containing Cu particles; and a glass frit including an oxide containing alkali metal, wherein a content of the alkali metal is 0.16 wt % or more and 0.35 wt % or less with respect to a total content of the Cu particles.

Conductive paste and multilayer electronic component

A varistor includes a substrate; first and second electrodes disposed on an upper side and a lower side of the substrate, respectively; a core varistor body surrounded by the substrate and disposed between the first and second electrodes; first and second terminals having at least portions disposed on one side and the other side of the substrate, respectively, and electrically connected to the first and second electrodes, respectively; and a cover varistor body covering the core varistor body and disposed in a level higher than an upper surface of the substrate or disposed in a level lower than a lower surface of the substrate.

Varistor and method of manufacturing the same

A varistor includes a varistor body, a first terminal disposed on one side of the varistor body, a second terminal disposed on the other side of the varistor body, a first electrode disposed on an upper portion of the varistor body, electrically connected to the first terminal, and extending towards the other side of the varistor body, and a second electrode disposed on a lower portion of the varistor body, electrically connected to the second terminal, and extending towards the one side of the varistor body.

Varistor

An inductor is provided including a multilayer body in which a plurality of magnetic layers containing a ferrite are laminated. A coil part including a plurality of conductive patterns is disposed in the multilayer body. External electrodes are electrically connected to the coil part. The ferrite may contain iron (Fe), manganese (Mn), nickel (Ni), zinc (Zn), and vanadium (V), and the ferrite may contain 40 to 55 mol % of iron (Fe) calculated as iron oxide (FeO), 5 to 20 mol % of nickel (Ni) calculated as nickel oxide (NiO), 15 to 25 mol % of zinc (Zn) calculated as zinc oxide (ZnO), 15 to 30 mol % of manganese (Mn) calculated as manganese oxide (MnO), and 1 to 4 mol % of vanadium (V) calculated as vanadium oxide (VO).

Ferrite and inductor including the same

A multilayer electronic component, a manufacturing method thereof, and a board having the same. The multilayer electronic component includes a plurality of magnetic metal layers, an internal conductive layer formed on the magnetic metal layer, an upper and lower cover layers formed on and below an active part including the plurality of magnetic metal layers and internal conductive layer. The multilayer electronic component may have excellent DC bias characteristics by using a magnetic metal material, implement low direction resistance (Rdc) by increasing a cross-sectional area of an internal coil, and secure high magnetic permeability while decreasing a core loss of the magnetic metal material to thereby improve efficiency characteristic.

Multilayer electronic component, manufacturing method thereof, and board having the same mounted thereon

There are provided a multilayer electronic component and a method of manufacturing the same. More particularly, there are provided a multilayer electronic component capable of maintaining high inductance at a high frequency due to excellent magnetic properties and having excellent DC bias properties and a dense fine structure to thereby improve strength, and a method of manufacturing the same.

Multilayer electronic component and method of manufacturing the same

There is provided a multi-layered chip electronic component including: a multi-layered body including a 2016-sized or less and a plurality of magnetic layers; conductive patterns electrically connected in a stacking direction to form coil patterns, within the multi-layered body; and non-magnetic gap layers formed over a laminated surface of the multi-layered body between the multi-layered magnetic layers and having a thickness Tg in a range of 1 &#x3bc;m&#x2266;Tg&#x2266;7 &#x3bc;m, wherein the number of non-magnetic gap layers may have the number of gap layers in a range between at least four layers among the magnetic layers and a turns amount of the coil pattern.

Multi-layered chip electronic component

Disclosed herein are a ferrite composition for a high frequency bead in that a part of Fe in M-type hexagonal ferrite represented by BaFeOis substituted with at least one metal selected from a group consisting of 2-valence, 3-valence and 4-valence metals, as well as a chip bead material using the same. According to embodiments of the present invention, the dielectric composition is characterized in that a part of Fe as a constituent of M-type hexagonal barium ferrite is substituted by other metals, to thus decrease a sintering temperature to 920&#xb0; C. or less without using any additive for low temperature sintering. Moreover, because of high SRF properties, the inventive composition is applicable to a multilayer type chip bead used at a high frequency of more than several hundreds MHz and a magnetic antenna.

Ferrite composition for high frequency bead and chip bead comprising the same

There is provided a multi-layered chip electronic component, including: a multi-layered body including a plurality of first magnetic layers on which conductive patterns are formed; and second magnetic layers interposed between the first magnetic layers within the multi-layered body, wherein the conductive patterns are electrically connected to form coil patterns in a stacking direction, and when a thickness of the second magnetic layer is defined as Ts and a thickness of the conductive pattern is defined as Te, 0.1&#x2266;Ts:Te&#x2266;0.3 is satisfied.

Disclosed herein are a nickel-zinc-copper (NiZnCu) based ferrite composition containing 0.001 to 0.3 parts by weight of bivalent metal, 0.001 to 0.3 parts by weight of trivalent metal, and 0.001 to 0.5 parts by weight of tetravalent metal based on 100 parts by weight of main component containing 47.0 to 50.0 mol % of FeO, 15.0 to 27.0 mol % of NiO, 18.0 to 25.0 mol % of ZnO, and 7.0 to 13.0 mol % of CuO, and a multilayered chip device and a toroidal core using the same. According to exemplary embodiments of the present invention, a bivalent metal, a trivalent metal, and a tetravalent are contained in a NiZuCu ferrite, thereby making it possible to provide a ferrite composition having excellent quality factor (Q) characteristics. Moreover, it is possible to provide a toroidal core and a multilayered chip device having excellent sinterability, permittivity, and quality factor (Q) characteristics using the ferrite composition.

Nickel-zinc-copper based ferrite composition, and multilayered chip device using the same

There are provided a composition for a ceramic electronic component having excellent sinterability and magnetic characteristics (Q), a manufacturing method thereof, and an electronic component using the same. The magnetic material composition for the ceramic electronic component is composed of ferric oxide (FeO) of 47.0 to 49.0 parts by mole, nickel oxide (NiO) of 16.0 to 24.0 parts by mole, zinc oxide (ZnO) of 18.0 to 25.0 parts by mole, and copper oxide (CuO) of 7.0 to 13.0 parts by mole, wherein a portion of ferric oxide may be substituted with boron oxide (BO). The ceramic electronic component manufactured by using the magnetic material composition for the ceramic electronic component has an excellent Q.

Magnetic material composition for ceramic electronic component, method of manufacturing the same, and ceramic electronic component using the same

Disclosed herein is a multilayer type power inductor including: a plurality of body layers including internal electrodes and having magnetic material layers stacked therein; and a plurality of gap layers, wherein the gap layer has an asymmetrical structure. In the multilayer type power inductor, portions that are in contact with the body layers have, a non-porous structure, which is a dense structure, and portions that are not in contact with the body layers have a porous structure, such that the gap layer has the asymmetrical structure. Therefore, a magnetic flux propagation path in a coil is dispersed to suppress magnetization at a high current, thereby making it possible to improve a change in inductance (L) value according to the application of current.

Multilayer type power inductor

A glass frit for dielectrics, a dielectric ceramic composition, a multilayer ceramic capacitor, and a method for manufacturing the same are disclosed. The glass frit has a composition represented by the formula aSiO-bBO-cLiO-dKO-eCaO-fAlO-gTiO-hZrO, wherein the ratio of components satisfies the conditions of 20&#x2266;a&#x2266;35, 20&#x2266;b&#x2266;35, 20&#x2266;c&#x2266;30, 3&#x2266;d&#x2266;5, 2&#x2266;e&#x2266;12, 2&#x2266;f&#x2266;10, 1&#x2266;g&#x2266;12 and 1&#x2266;h&#x2266;7 in terms of mol % where a+b+c+d+e+f+g+h=100. The dielectric ceramic composition comprises 100 parts by weight of (CaR)(ZrTi)O, 0.5&#x2dc;2.5 parts by weight of the glass frit, and 1.0&#x2dc;5.0 parts by weight of a Mn compound. Additionally, the multilayer ceramic capacitor, and the method for manufacturing the same also use the glass frit having the above composition. The ratio of tetracoordinate boron to tricoordinate boron is increased in a lithium borosilicate glass, thereby enhancing structural property, and the components of AlO, TiOand ZrO, enhance acid resistance.

Growing community of inventors

Gyunggi-do, South Korea

Ic Seob Kim