Intel Corporation

Ibrahim Ban

Peter L D Chang

David L Kencke

Uygar E Avci

Uday Shah

Paul B Fischer

Peter Chang

Edris M Mohammed

Marko Radosavljevic

Han Wui Then

Sansaptak W Dasgupta

Mauro J Kobrinsky

Miriam Ruth Reshotko

Avci E Uygar

Willy Rachmady

Matthew V Metz

Mark T Bohr

Kevin Lai Lin

Bernhard Sell

Seiyon Kim

Kimin Jun

Bruce A Block

Sanjay S Natarajan

Arnab Sen Gupta

Allen B Gardiner

Pushkar Ranade

Kevin P O'brien

Jia-Hung Tseng

Brian Corbett

Roberto Pagano

Ved V Gund

In one embodiment, a resonator device includes a substrate comprising a piezoelectric material and a set of electrodes on the substrate. The electrodes are in parallel and a width of the electrodes is equal to a distance between the electrodes. The RF resonator device further includes a set of switches, with each switch coupled to a respective electrode. The switches are to connect to opposite terminals of an alternating current (AC) signal source and select between the terminals of the AC signal source based on an input signal.

Digitally controlled lithographically-defined multi-frequency acoustic resonators

A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Floating body memory cell having gates favoring different conductivity type regions

A device including a III-N material is described. The device includes a transistor structure having a first layer including a first group III-nitride (III-N) material, a polarization charge inducing layer above the first layer, the polarization charge inducing layer including a second III-N material, a gate electrode above the polarization charge inducing layer and a source structure and a drain structure on opposite sides of the gate electrode. The device further includes a plurality of peripheral structures adjacent to transistor structure, where each of the peripheral structure includes the first layer, but lacks the polarization charge inducing layer, an insulating layer above the peripheral structure and the transistor structure, wherein the insulating layer includes a first dielectric material. A metallization structure, above the peripheral structure, is coupled to the transistor structure.

Group III-nitride devices with improved RF performance and their methods of fabrication

Disclosed herein are integrated circuit (IC) components with substrate cavities, as well as related techniques and assemblies. In some embodiments, an IC component may include a substrate, a device layer on the substrate, a plurality of interconnect layers on the device layer, and a cavity in the substrate.

Integrated circuit components with substrate cavities

Systems and methods may couple on-chip optical circuits to external fibers. An SOI waveguide structure may include mirror structures and tapered waveguides to optically couple optical circuits to fibers in a vertically oriented external connector. The mirror structure(s) may be angularly disposed at the ends of the silicon waveguide structure. An oxide layer may cover a buried oxide layer and the silicon waveguide structure. The tapered waveguide(s) may have a narrow end and a wide end. The narrow end of the tapered waveguide(s) may be disposed above the mirror structures. The tapered waveguide(s) may extend through the oxide layer from the narrow end in a direction perpendicular to the silicon waveguide structure. An external connector may fit over the tapered waveguide(s) and uses a fiber array traveling through a connector body to optically couple to the external fiber.

Optical photonic circuit coupling

Systems and methods may provide for an integrated miniature sensor that operates in the Terahertz region of the electromagnetic spectrum. The integrated miniature sensor may detect a remote target and operate in a non-contact, non-invasive manner. Numerous signal analysis techniques may be employed such as Doppler radar technology, absorption spectroscopy, and others when the integrated miniature sensor is used in biomedical, physiological and other settings where prolonged recording of bio-signals is needed.

Integrated Terahertz sensor

A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to he fabricated is described.

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Beaverton, OR, United States of America

Ibrahim Ban