Emi, LLC

Thorn Emi Plc

Ian Robins

Brian C Webb

John F Ross

Alastair Sibbald

Edward C Bell

A gas sensitive device, for example a gas sensitive MISFET (FIGS. 1 to 3) has a gas-sensitive electrode (15) comprising a catalytically active metal (e.g. Pt or Pd) and a non-metallic material (e.g. SiO.sub.2) mixed with, or deposited at an exposed surface of, the metal to modify the catalytic activity of the metal. The electrode has an enhanced sensitivity to, and selectivity of, certain gases. The composite material is applicable to other gas-sensitive devices, e.g. an optical fibre gas sensor.

Gas sensitive device

An ammonia gas sensor comprises a dual gate field effect transistor (FET) in which the two gate electrodes are of platinum deposited respectively by sputtering and evaporation. The gate regions of the two FETs are connected together differentially and the net drain source voltage represents the concentration of ammonia gas to which the sensor is exposed.

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Hayes, United Kingdom

Ian Robins