Spts Technologies Limited

Trikon Holdings Limited

Ian Moncrieff

Rhonda Hyndman

Clive Luca Widdicks

Steve Burgess

Scott Haymore

Anthony Paul Wilby

Stephen Robert Burgess

Amit Rastogi

Adrian Thomas

Tony Wilby

Paul Rich

Paul Densley

Chris Kendal

Kyle Hutchings

P Densley

A Physical Vapour Deposition (PVD) apparatus having a PVD chamber, a target, a substrate support in the PVD chamber comprising an upper rotatable portion having an upper surface on which a substrate can be supported and a lower stationary portion, an RF source configured to supply an RF signal having an RF power to the lower stationary portion, and an arrangement for rotating the upper rotatable portion during a PVD process performed in the PVD chamber. The upper rotatable portion and the lower stationary portion are spaced apart so that the RF power supplied to the lower stationary portion is capacitively coupled to the upper rotatable portion.

PVD apparatus and method

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

Method and apparatus for controlling stress variation in a material layer formed via pulsed DC physical vapor deposition

A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

Apparatus and a method of controlling thickness variation in a material layer formed using physical vapour deposition

A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

DC magnetron sputtering

A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.

An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

Plasma etching apparatus

A composite shield assembly is for use in deposition apparatus defining a work piece location. The assembly includes a first shield element for position circumjacent the work piece location and a second shield element for extending around and carrying the first element. The thermal conductivity of the first element is greater than that of the second element, and the elements are arranged for intimate thermal contact.

Composite shielding

This invention relates to a method of cooling an immersed induction coil, such as an ionizing coil used in a vacuum processing chamber. The coil may comprise a coiled hollow tube through which coolant can flow when pumped by a pump A valve is provided so that air can be passed through the tube in either direction and the direction of flow is controlled by a controller which acts on the valve The rate of switching of the valve can be determined by a process condition or by monitoring the temperature of the downstream coolant and/or the coil.

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Wotton-under-Edge, United Kingdom

Ian Moncrieff