Applied Materials, Inc.

Ian Matthew McMackin

Ludovic Godet

Wayne McMillan

Chien-An Chen

Brian Alexander Cohen

Sivapackia Ganapathiappan

Rutger Meyer Timmerman Thijssen

Jinxin Fu

Yingdong Luo

Yifei Wang

Amita Joshi

Embodiments of the present disclosure generally relate to imprint compositions and materials and related processes useful for nanoimprint lithography (NIL). In one or more embodiments, an imprint composition contains one or more types of nanoparticles, one or more surface ligands, one or more solvents, one or more additives, and one or more acrylates.

High refractive index imprint compositions and materials and processes for making the same

Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

Patterning of multi-depth optical devices

Embodiments of the present disclosure relate to measurement systems and methods for diffracting light. The measurement system includes a stage, an optical arm, and one or more detector arms. The method of diffracting light includes a method of diffracting light is provided, including projecting light beams having wavelength &#x3bb;to a first zone of a first substrate at the fixed beam angle &#x3b8;and the maximum orientation angle &#x3d5;, obtaining a displacement angle &#x394;&#x3b8;, determining a target maximum beam angle &#x3b8;, wherein &#x3b8;=&#x3b8;+&#x394;&#x3b8;, and determining a test grating pitch Pby a modified grating pitch equation P=&#x3bb;/(sin &#x3b8;+sin &#x3b8;). The measurement system and method allow for measurement of nonuniform properties of regions of an optical device, such as grating pitches and grating orientations.

Measurement system and a method of diffracting light

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Mountain View, CA, United States of America

Ian Matthew McMackin