Dow Corning Corporation

Dow Silicones Corporation

Ian Manning

Mark Jon Loboda

Kevin J Moeggenborg

Darren Hansen

Christopher Parfeniuk

Victor Torres

Clinton Whiteley

Stephan Mueller

Jeffrey Quast

A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Method for manufacturing SiC wafer fit for integration with power device manufacturing technology

Growing community of inventors

Midland, MI, United States of America

Ian Manning