Advanced Semiconductor Engineering, Inc.

Ian Hu

Chih-Pin Hung

Ming-Han Wang

Meng-Kai Shih

Jin-Feng Yang

Hsin-En Chen

Shin-Luh Tarng

Hung-Hsien Huang

Cheng-Yu Tsai

Hsuan Yu Chen

Jung-Che Tsai

Shih-Wei Chen

Chih-Yi Huang

Wei-Hsuan Lee

Ping-Feng Yang

Sung-Mao Li

Chun Hung Tsai

Tsun-Lung Hsieh

Tsan-Hsien Chen

Hui-Chen Hsu

Jui-Cheng Yu

Po-Cheng Huang

Jia-Rung Ho

Chien-Neng Liao

A semiconductor package structure includes a semiconductor die, at least one wiring structure, a metal support, a passive element, a plurality of signal vias, and a plurality of thermal structures. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die. The metal support is used for supporting the semiconductor die. The passive element is electrically connected to the semiconductor die. The signal vias are electrically connecting the passive element and the semiconductor die. The thermal structures are connected to the passive element, and the thermal structures are disposed on a periphery of the at least one wiring structure.

Semiconductor package structure and semiconductor manufacturing process

A semiconductor device package includes a first substrate, a second substrate, and a first electronic component between the first substrate and the second substrate. The first electronic component has a first surface facing the first substrate and a second surface facing the second substrate. The semiconductor device package also includes a first electrical contact disposed on the first surface of the first electronic component and electrically connecting the first surface of the first electronic component with the first substrate. The semiconductor device package also includes a second electrical contact disposed on the second surface of the first electronic component and electrically connecting the second surface of the first electronic component with the second substrate. A method of manufacturing a semiconductor device package is also disclosed.

Semiconductor device package and method of manufacturing the same

A heat transfer element, a method for manufacturing the same and a semiconductor structure including the same are provided. The heat transfer element includes a housing, a chamber, a dendritic layer and a working fluid. The chamber is defined by the housing. The dendritic layer is disposed on an inner surface of the housing. The working fluid is located within the chamber.

Heat transfer element, method for forming the same and semiconductor structure comprising the same

A substrate structure, a method for manufacturing the same and a semiconductor device structure including the same are provided. The substrate structure includes a heat pipe, a first conductive layer and an insulation layer. The heat pipe has an upper surface and a lower surface. The heat pipe includes an opening extending from the upper surface to the lower surface. The first conductive layer is disposed on the upper surface and includes a via structure passing through the opening. The insulation layer is disposed between the heat pipe and the conductive layer.

Substrate structures, methods for forming the same and semiconductor device structures comprising the same

A substrate, a semiconductor package device and a method of manufacturing a semiconductor device package are provided. The substrate includes a low density wiring structure, a first middle density wiring structure and high density wiring structure. The first middle density wiring structure is electrically connected to the low density wiring structure. The high density wiring structure is electrically connected to the low density wiring structure. The high density wiring structure and the first middle density wiring structure are disposed side by side. A line space of a circuit layer of the low density wiring structure is greater than a line space of a circuit layer of the first middle density wiring structure. The line space of the circuit layer of the first middle density wiring structure is greater than a line space of a circuit layer of the high density wiring structure.

Substrate and semiconductor device package and method for manufacturing the same

An optical measurement equipment includes an adjustment apparatus and at least two image capturing devices. The image capturing devices have a depth-of-field and attached to the adjustment apparatus. The image capturing devices are adjusted by the adjustment apparatus such that a portion to be measured of a workpiece is located within the depth-of-field of the image capturing devices.

Optical measurement equipment and method for measuring warpage of a workpiece

A semiconductor package structure includes a package substrate and a semiconductor die. The package substrate includes a plurality of hollow vias extending through the package substrate. The semiconductor die is electrically connected to the package substrate. The hollow vias are disposed under the semiconductor die.

Semiconductor package structure and electronic device

A semiconductor device package includes a substrate, an electronic component disposed on the substrate, a supporting structure disposed on the substrate and surrounding the electronic component, and a heat spreading structure disposed on the supporting structure. A length of the supporting structure and a length of the heat spreading structure are greater than a length of the substrate.

Semiconductor device packages and methods of manufacturing the same

A semiconductor device package includes a semiconductor device, a conductive bump, a first encapsulant and a second encapsulant. The semiconductor device has a first surface, a second surface and a lateral surface. The second surface is opposite to the first surface. The lateral surface extends between the first surface and the second surface. The semiconductor device comprises a conductive pad adjacent to the first surface of the semiconductor device. The conductive bump is electrically connected to the conductive pad. The first encapsulant covers the first surface of the semiconductor device and a first portion of the lateral surface of the semiconductor device, and surrounds the conductive bump. The second encapsulant covers the second surface of the semiconductor device and a second portion of the lateral surface of the semiconductor device.

Multi-moldings fan-out package and process

An electronic device includes a main substrate, a semiconductor package structure and at least one heat pipe. The semiconductor package structure is electrically connected to the main substrate, and includes a die mounting portion, a semiconductor die and a cover structure. The semiconductor die is disposed on the die mounting portion. The cover structure covers the semiconductor die. The heat pipe contacts the cover structure for dissipating a heat generated by the semiconductor die.

Electronic device comprising heat pipe contacting a cover structure for heat dissipation

A semiconductor package structure includes a vapor chamber, a plurality of electrical contacts, a semiconductor die and an encapsulant. The vapor chamber defines an enclosed chamber for accommodating a working liquid. The electrical contacts surround the vapor chamber. The semiconductor die is disposed on the vapor chamber, and electrically connected to the electrical contacts through a plurality of bonding wires. The encapsulant covers a portion of the vapor chamber, portions of the electrical contacts, the semiconductor die and the bonding wires.

Semiconductor package structure and assembly structure

A semiconductor package structure includes a package substrate, at least one semiconductor die, a heat dissipating device, at least one electronic device and a heat transmitting structure. The package substrate has a first surface and a second surface opposite to the first surface. The semiconductor die is electrically connected to the first surface of the package substrate. The heat dissipating device is thermally connected to the first surface of the package substrate. The electronic device is electrically connected to the second surface of the package substrate. The electronic device has a first surface and a second surface opposite to the first surface, and the first surface of the electronic device faces the second surface of the package substrate. The heat transmitting structure is disposed adjacent to the second surface of the package substrate, and thermally connected to the electronic device and the heat dissipating device.

Substrate structure and semiconductor package structure

A semiconductor package includes a substrate, a semiconductor chip and a heat dissipation structure. The semiconductor chip includes a first surface, a second surface opposite to the first surface, and at least one chip pad disposed adjacent to the first surface. The chip pad is electrically connected to the substrate. The heat dissipation structure is disposed adjacent to the second surface of the semiconductor chip and a portion of the substrate. An area of the heat dissipation structure is greater than an area of the semiconductor chip.

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Kaohsiung, Taiwan

Ian Hu