Element Six Technologies Limited

Diamond Microwave Devices Limited

Other

Element Six Gmbh

Ian Friel

Geoffrey Alan Scarsbrook

Daniel James Twitchen

Philip Maurice Martineau

Christopher John Howard Wort

Katharine Louise Atkinson

Martin David Dawson

Chee-Leong Lee

John Robert Brandon

Matthew Lee Markham

Richard Stuart Balmer

Sarah Louise Geoghegan

Stephen David Williams

Erdan Gu

Joseph Michael Dodson

Neil Perkins

Michael Peter Gaukroger

Paul Martyn Spear

Harpreet Kaur Dhillon

Jonathan James Wilman

Michael Andrew Cooper

Steven Edward Coe

Christopher Wort

Keith Barry Guy

Robert Charles Burns

Grant Charles Summerton

Timothy Patrick Gerard Addison

Simon Craig Lawson

John Olaf Hansen

Benjamin Wickham

Ben Llewlyn Green

Helen Jennifer Gallon

Rizwan Khan

Katharine Robertson

Daniel Twitchen

A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 10cm. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

Method of manufacture of single crystal synthetic diamond material

A non-planar chemical vapour deposition polycrystalline diamond body has a dome body having an apex and an outer periphery. The dome body has an average radius of curvature in a range of 4 mm to 25 mm and a maximum linear dimension at the outer periphery of the dome body of no more than 26 mm. The average radius of curvature is no less than 0.6 times the maximum linear dimension at the outer periphery. A method of fabricating the non-planar diamond body is also disclosed.

Non-planar polycrystalline diamond body

A coloured single crystal CVD synthetic diamond material comprising: a plurality of layers, wherein the plurality of layers includes at least two sets of layers which differ in terms of their defect composition and colour, wherein defect type, defect concentration, and layer thickness for each of the at least two sets of layers is such that if the coloured single crystal CVD diamond material is fabricated into a round brilliant cut diamond comprising a table and a culet, and having a table to culet depth greater than 1 mm, the round brilliant cut diamond comprises a uniform colour as viewed by naked human eye under standard ambient viewing conditions in at least a direction through the table to the culet.

Single crystal chemical vapor deposited synthetic diamond materials having uniform color

A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 10cm. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900&#xb0; C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power P&#x3c4; into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power P&#x3c4; into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

Microwave plasma reactor for manufacturing synthetic diamond material

A polycrystalline CVD diamond material comprising a surface having a surface roughness Rof less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm.

Plasma etching of diamond surfaces

The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterized by X-ray topography is less than 400/cm2 over an area of greater than 0.014 cm2. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterized by X-ray topography of less than 400/cm2 over an area greater than 0.014 cm2; an optical isotropy of less than 1&#xd7;10-5 over a volume greater than 0.1 mm3; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds.

High crystalline quality synthetic diamond

The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rof the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rof the plasma etched surface is less than 1.5 times the roughness of Rof the original surface, or Rof the plasma etched surface is less than 1 nm.

Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is disclosed. In particular, a CVD single crystal diamond material having preferred characteristics of longest linear internal dimension, birefringence and absorption coefficient, when measured at room temperature, is disclosed. Uses of the diamond material, including in a Raman laser, and methods of producing the diamond are also disclosed.

CVD single crystal diamond material

A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the diamond material, for instance to provide means by which its synthetic nature can more easily be determined. It can also be exploited to generate single crystal diamond material of high color.

Diamond

Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.

Electronic field effect devices and methods for their manufacture

Electronic field effect devices

A method of producing CVD diamond having a high color, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.

High colour diamond layer

Growing community of inventors

Berkshire, United Kingdom

Ian Friel