Plessey Semiconductors Limited

Ian Daniels

Jun-Youn Kim

Mohsin Aziz

John Shannon

Kevin Stribley

A light emitting diode (LED) precursor is provided. The LED precursor comprises a substrate (), an LED structure () comprising a plurality of Group III-nitride layers, and a passivation layer (). The LED structure comprises a p-type semiconductor layer (), an n-type semiconductor layer (), and an active layer () between the p-type and n-type semiconductor layers. Each of the plurality of Group III-nitride layers comprises a crystalline Group III-nitride. The LED structure has a sidewall () which extends in a plane orthogonal to a () crystal plane of the Group III-nitride layers. The passivation layer is provided on the sidewall of the LED structure such that the passivation layer covers the active layer. The passivation layer comprises a crystalline Group III-nitride with a bandgap higher than a bandgap of the active layer. The LED structure is shaped such that the sidewall of the LED structure is aligned with a non-polar crystal plane of each the Group III-nitride layers of the LED structure.

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Plymouth, United Kingdom

Ian Daniels