Tokyo Electron Limited

Ian Colgan

Ioan Domsa

David Hurley

George Eyres

Barry Clarke

Gerhardus Van Der Linde

Toru Ishii

Lars-Ake Ragnarsson

Mihaela Ioana Popovici

Patrick Hughes

Maciej Burel

Robert Daniel Clark

Makoto Saito

Dina Triyoso

Mitsuru Yamazaki

Noel O'Shaughnessy

Gerrit J Leusink

Einstein Noel Abarra

Koyu Hasegawa

Junichi Sato

Saito Makoto

Jattie Van Der Linde

Pat Hughes

Tomoaki Abe

Bartlomiej Burkowicz

The disclosure describes equipment for magnetic annealing of a substrate, the equipment including: an anneal chamber configured to heat and cool a substrate held at a soak location along a first direction in the anneal chamber, the anneal chamber including: a heater, a cooler, and a substrate lifter including a substrate holder, where the substrate holder is configured to support a substrate oriented such that the first direction is perpendicular to a major surface of the substrate; and a magnet assembly configured to establish a homogeneous zone in the anneal chamber, the soak location being within the homogeneous zone, the homogeneous zone including a region of magnetic field.

Magnetic annealing equipment and method

A method of fabricating a semiconductor device includes placing a semiconductor wafer into a first deposition chamber of a manufacturing platform, the semiconductor wafer comprising a first conductive layer, depositing a dielectric layer on the first conductive layer in the first deposition chamber, placing the semiconductor wafer in a second deposition chamber of the manufacturing platform, and depositing a second conductive layer on the dielectric layer in the second deposition chamber. The method further includes placing the semiconductor wafer into a processing chamber of an electric-field annealer of the manufacturing platform, and in the processing chamber, applying an electrical bias voltage across the dielectric layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential, and annealing the semiconductor wafer while applying the electrical bias voltage.

Semiconductor manufacturing platform with in-situ electrical bias and methods thereof

A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

Semiconductor processing systems with in-situ electrical bias

A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

Semiconductor processing system with in-situ electrical bias and methods thereof

An apparatus for magnetic annealing one or more workpieces, and a method of operating the apparatus, are described. The apparatus includes: a workpiece holder configured to support one or more workpieces, wherein the one or more workpieces having at least one substantially planar surface; an optional workpiece heating system configured to elevate the one or more workpieces to an anneal temperature; and a magnet assembly having a first magnet and a second magnet, the first and second magnets defining a gap between opposing poles of each magnet, wherein the magnet assembly is arranged to generate a magnetic field substantially perpendicular to the planar surface of the one or more workpieces.

Workpiece magnetizing system and method of operating

A horizontal substrate carrier is provided, for example a carrier for holding semiconductor substrates during horizontal thermal processing. The horizontal substrate carrier has asymmetrically placed support rails. One side of the horizontal substrate carrier has no upper rail while the other side of the horizontal substrate carrier has an upper rail placed at a relatively high location, for example at an angular location of 60&#xb0; or more, more preferably of 70&#xb0; or more, and most preferably at 90&#xb0;. The side without an upper rail may be used for robotic loading of the horizontal substrate carrier. In a preferred embodiment, only three rails are provided: one upper rail on one side and two lower rails. The use and placement of these three rails can hold the substrate in precise uniform locations, minimize substrate movement, and minimize particle generation, all while allowing for easy robotic access.

Horizontal substrate boat

Disclosed is a connection structure that connects a housing to a magnetic annealing furnace that is provided with a fixedly arranged magnet and includes a first drum flange having a cylindrical flange portion. The connection structure includes: a second drum flange that is attached and fixed to the housing and includes a flange portion configured to externally or internally fit the flange portion of the first drum flange thereto; a first sealant that is installed between facing surfaces of the housing and the second drum flange; and a second sealant that is installed between facing surfaces of the first and second drum flanges.

Connection structure, magnetic annealing device using same, and connecting method

Disclosed is a magnetic annealing apparatus including a processing container having a horizontally-elongated tubular shape and configured to perform a magnetic annealing processing on a plurality of substrates accommodated therein in a magnetic field; a heating unit provided to cover at least a part of a surface of the processing container that extends in a longitudinal direction, from outside; a magnet provided to cover the heating unit from the outside of the heating unit; a substrate holder configured to hold the plurality of substrates within the processing container; and a heat shielding plate provided to surround a part of the substrate holder.

Magnetic annealing apparatus

Embodiments are described for annealing systems and related methods to process microelectronic workpieces using vertical multi-batch perpendicular magnetic annealing systems that allow for a side-by-side configuration of multiple annealing systems to satisfy reduced footprint requirements.

Vertical multi-batch magnetic annealing systems for reduced footprint manufacturing environments

An annealing system and method of operating is described. The annealing system includes a vertical furnace having an inner cylindrical insulating tube and at least one heating element surrounding an outer surface thereof, wherein the inner cylindrical insulating tube defines a processing space into which a plurality of workpieces may be vertically translated and subjected to thermal and/or magnetic processing. The annealing system further includes a workpiece boat for carrying at least one hundred workpieces, a boat loader arranged beneath the vertical furnace, and configured to vertically translate the workpiece boat and position the workpieces within the processing space, and a magnet system arranged outside the vertical furnace and configured to generate a magnetic field within the processing space.

Growing community of inventors

Dublin, Ireland

Ian Colgan