Taiwan Semiconductor Manufacturing Comp. Ltd.

Chunghwa Picture Tubes, Ltd.

I-Ting Huang

Szu-Wei Lu

Tsung-Fu Tsai

Shih-Ting Lin

Kung-Chen Yeh

Chen-Hsuan Tsai

Ching-Lung Chang

Shin-Chang Chen

Hsu Shan

A package structure includes a redistribution circuit structure, a wiring substrate, an insulating encapsulation, and a reinforcement structure. The redistribution circuit structure has dielectric layers. The wiring substrate is disposed on the redistribution circuit structure. The insulating encapsulation laterally encapsulates the wiring substrate. The reinforcement structure includes reinforcement pattern layers and reinforcement vias. The reinforcement pattern layers and the dielectric layers are stacked alternately. The reinforcement vias penetrate through the dielectric layers to connect the reinforcement pattern layers. At least one of the reinforcement pattern layers is embedded in the insulating encapsulation. The reinforcement structure is electrically floating.

Package structure and manufacturing method thereof

A package structure is provided. The package structure includes a through substrate via structure, a first stacked die package structure, an underfill layer, and a package layer. The through substrate via structure is formed over a substrate. The first stacked die package structure is over the through substrate via structure, wherein the first stacked die package structure comprises a plurality of memory dies. The underfill layer is over the first stacked die package structure. the package layer is over the underfill layer, wherein the package layer has a protruding portion that extends below a top surface of the through substrate via structure.

Package structure

A package structure includes a redistribution circuit structure, a wiring substrate, a semiconductor device, an insulating encapsulation, and a reinforcement structure. The redistribution circuit structure has dielectric layers. The wiring substrate is disposed on the redistribution circuit structure. The semiconductor device is disposed on the redistribution circuit structure opposite to the wiring substrate. The insulating encapsulation laterally encapsulates the wiring substrate. The reinforcement structure is partially embedded in the redistribution circuit structure and is partially embedded in the insulating encapsulation. The reinforcement structure includes reinforcement pattern layers and reinforcement vias. The reinforcement pattern layers and the dielectric layers are stacked alternately. The reinforcement vias penetrate through the dielectric layers to connect the reinforcement pattern layers. The reinforcement structure is electrically floating.

A package structure is provided. The package structure includes a through substrate via structure, a first stacked die package structure, an underfill layer, and a package layer. The through substrate via structure is formed over a substrate. The first stacked die package structure is over the through substrate via structure. The first stacked die package structure includes a plurality of memory dies. The underfill layer is over the first stacked die package structure. The underfill layer includes a first protruding portion that extends below a top surface of the through substrate via structure. The package layer is over the underfill layer. The package layer has a second protruding portion that extends below the top surface of the through substrate via structure.

Package structure and method for forming the same

A package structure includes a redistribution circuit structure, a wiring substrate, a semiconductor device, an insulating encapsulation, and a reinforcement structure. The redistribution circuit structure has a first surface and a second surface opposite to the first surface. The wiring substrate is disposed on the first surface of the redistribution circuit structure. The semiconductor device is disposed on the second surface of the redistribution circuit structure. The insulating encapsulation laterally encapsulates the wiring substrate. The reinforcement structure is directly in contact with the insulating encapsulation.

A package structure and method for forming the same are provided. The method includes forming a through substrate via structure in a substrate, and forming a first trench in the substrate. The method includes stacking a first stacked die package structure over the substrate using a plurality of first bonding structures. The first bonding structures are between the substrate and the first stacked die package structure, and a there is plurality of cavities between two adjacent first bonding structures. The method also includes forming an underfill layer over the first stacked die package structure and in the cavities, and the underfill layer is formed in a portion of the first trench. The method further includes forming a package layer over the underfill layer.

A liquid crystal module includes a housing, a light guide plate, at least one optical film, a liquid crystal panel, and a light bar. The housing includes a bottom plate with a bearing surface and a frame wall connected to the bottom plate. The light guide plate is disposed on the bearing surface and has a light emitting surface and a light incident side surface. The frame wall surrounds the light guide plate. The optical film is disposed above the light emitting surface. The liquid crystal panel is disposed above the optical film. The light bar includes a first circuit board and at least one light emitting element mounted on the first circuit board. The light emitting element is located opposite to the light incident side surface. The first circuit board located between the liquid crystal panel and the light emitting surface partially covers the light emitting surface.

Liquid crystal module and method for assembling thereof

A light source device including light-emitting diodes (LEDs) and a carrier is provided. Chromaticities of some LEDs fall in a first area of a chromaticity coordinate diagram, while chromaticities of the other LEDs fall in a second area of the chromaticity coordinate diagram. The second area and the first area are point symmetric to a white center of the chromaticity coordinate diagram. A chromaticity coordinate value farthest from the white center in the first area is (X, Y), and a chromaticity coordinate value farthest from the white center in the second area is (X, Y), wherein 0.06&#x2267;|X&#x2212;X|&#x2267;0.03 and 0.06&#x2267;|Y&#x2212;Y|&#x2267;0.03. The LEDs are disposed on the carrier, and a chromaticity difference of any two adjacent LEDs in the chromaticity coordinate diagram is (&#x394;X, &#x394;Y), wherein |&#x394;X|&#x2266;0.01 and |&#x394;Y|&#x2266;0.01.

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Kaohsiung, Taiwan

I-Ting Huang