Taiwan Semiconductor Manufacturing Comp. Ltd.

I-Ting Chen

Jing-Cheng Lin

Szu Wei Lu

Po-Hao Tsai

Ying-Ching Shih

Chen-Hua Douglas Yu

Shin-Puu Jeng

Cheng-Lin Huang

Ying Ching Shih

Szu-Wei Lu

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages are disclosed. In one embodiment, a semiconductor device includes an insulating material layer having openings on a surface of a substrate. One or more insertion bumps are disposed over the insulating material layer. The semiconductor device includes signal bumps having portions that are not disposed over the insulating material layer.

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages

A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.

Flux residue cleaning system and method

A semiconductor device includes a substrate having a major surface and conductive bumps distributed over the major surface of the substrate. Each conductive bump of a first subset of the conductive bumps comprises a regular body and a second subset of the conductive bumps comprises a group of separate conductive bumps uniformly distributed around a periphery of a central opening.

Self-aligning conductive bump structure and method of fabrication

A conductive bump structure of a semiconductor device comprises a substrate comprising a major surface and conductive bumps distributed over the major surface of the substrate. Each of a first subset of the conductive bumps comprises a regular body, and each of a second subset of the conductive bumps comprises a ring-shaped body.

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Hsinchu, Taiwan

I-Ting Chen