United Microelectronics Corp.

I T Chen

Horng-Bor Lu

A method to treat a silicon oxynitride surface, including a silicon oxynitride surface covered by a photo resist layer, is described in which the photo resist layer is first removed by an oxygen plasma treatment process, followed by an argon plasma treatment process to overetch the SiON layer.

Treatment on silicon oxynitride

A deposition process for forming a void-free dielectric layer is described. A first dielectric layer,is formed over a conductor pattern,A second dielectric layer,is formed to conform to the first dielectric layer. A third dielectric layer,is formed to cover the second dielectric layer. The first, second, and third dielectric layers can be formed by high density plasma deposition, atmospheric pressure deposition, and plasma enhanced deposition, respectively. The second dielectric layer can alternatively be formed by plasma enhanced deposition.

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Taipie, Taiwan

I T Chen