Phison Electronics Corporation

I-Sung Huang

Szu-Wei Chen

Po-Cheng Su

Yu-Hung Lin

A read voltage calibration method, a memory storage device, a memory control circuit unit are provided, including: reading, according to a first read command, a first physical unit based on a first read voltage level to obtain first data, and the first read voltage level is a default read voltage level corresponding to the first physical unit or a first voltage difference exists between the first read voltage level and the default read voltage level; decoding the first data to obtain first error bit information; reading, according to a second read command, the first physical unit based on a second read voltage level to obtain second data, and a second voltage difference exists between the second read voltage level and the default read voltage level; decoding the second data to obtain second error bit information; calibrating the default read voltage level according to the first and second error bit information.

Growing community of inventors

Miaoli County, Taiwan

I-Sung Huang