Taiwan Semiconductor Manufacturing Comp. Ltd.

I-Shuo Liu

Kei-Wei Chen

Chih Hung Chen

William Weilun Hong

Kuanhua Su

Chih-Chun Hsia

Hsin-Ting Chou

Hui-Chi Huang

Jung-Tsan Tsai

Chien-Ping Lee

Hsin Ting Chou

A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Hotspot avoidance method of manufacturing integrated circuits

Hotspot avoidance method for manufacturing integrated circuits

A method includes performing a chemical-mechanical planarization (CMP) on an article, providing a polishing fluid capable of transferring charges to the article, and detecting a current generated in response to the charges transferred to the article. An apparatus that is capable of performing the method and a system that includes the apparatus are also disclosed.

Systems and methods for chemical mechanical planarization with photo-current detection

A method includes performing a chemical-mechanical planarization (CMP) on an article, providing a polishing fluid including luminescent particles capable of generating a fluorescent light in response to a light incident on the article, and detecting an intensity of the fluorescent light. An apparatus that is capable of performing the method and a system that includes the apparatus are also disclosed.

Systems and methods for chemical mechanical planarization with photoluminescence quenching

Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system for performing chemical-mechanical planarization on an article includes a polishing head configured to perform a chemical-mechanical planarization (CMP) on an article, a polishing pad configured to support the article, a light source configured to emit an incident light, a polishing fluid including a plurality of emitter particles capable of emitting a fluorescent light in response to the incident light, a fluorescence light detector configured to detect the fluorescent light, and at least one processor configured to control the polishing head based on the detected fluorescent light.

Systems and methods for chemical mechanical planarization with fluorescence detection

Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system for performing chemical-mechanical planarization includes: a polishing pad configured to support an article for chemical-mechanical planarization (CMP), wherein the article includes a CMP stop material, a polishing head configured to perform chemical-mechanical planarization on the article, a light source configured to provide an incident light, a polishing fluid including a plurality of luminescent particles capable of emitting a fluorescent light in response to the incident light, a fluorescence detector configured to detect the intensity of the fluorescent light, and at least one processor coupled to the fluorescent detector and the polishing head, wherein the at least one processor is configured to control the polishing head based on the detected fluorescent light.

Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system includes a polishing head, a polishing pad, a light source, a polishing fluid, a current detector, and one or more processors. The polishing head is configured to perform chemical-mechanical planarization (CMP) on an article. The polishing pad is configured to support the article. The light source is configured to emit an incident light. The polishing fluid is configured to perform CMP including a plurality of light-absorption particles being capable of transferring charges to a stop layer in the article in response the incident light. The current detector is configured to detect a current in response to the light-absorption particles transferring charges to the stop layer. The one or more processors are configured to control the polishing head based on the detected current.

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Hsinchu, Taiwan

I-Shuo Liu