Magnachip Semiconductor, Inc.

Intersil Americas Inc.

I-Shan Sun

Francois Hebert

Young Bae Kim

Kwang Il Kim

Rick Carlton Jerome

Kwangil Kim

Jin Woo Moon

In Taek Oh

Young Ju Kim

Youngbae Kim

Jinwoo Moon

Youngju Kim

Intaek Oh

There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a source region disposed apart from a drain region, a first body region surrounding the source region, a deep well region disposed below the drain region, and a second body region disposed below the first body region. A bottom surface of the second body region is not coplanar with a bottom surface of the deep well region, and the first body region has a different conductivity type from the second body region.

Semiconductor device

A method for through active-silicon via integration is provided. The method comprises forming an electrical device in a handle wafer. The method also comprises forming an isolation layer over the handle wafer and the electrical device and joining an active layer to the isolation layer. Further, the method comprises forming at least one trench through the active layer and the isolation layer to expose a portion of the handle wafer and depositing an electrically conductive material in the at least one trench, the electrically conductive material providing an electrical connection to the electrical device through the active layer.

Systems and methods for forming isolated devices in a handle wafer

A method of fabricating a semiconductor device capable of increasing a breakdown voltage without an additional epitaxial layer or buried layer with respect to a high-voltage horizontal MOSFET.

Method of fabricating a LDMOS device having a first well depth less than a second well depth

Growing community of inventors

San Jose, CA, United States of America

I-Shan Sun