Hon Hai Precision Industry Co., Ltd.

Industrial Technology Research Institute

Hong-fu Jin Precision Industry (shenzhen) Co., Ltd.

Toppoly Optoelectronics Corporation

Tpo Displays Corporation

Ye Xin Technology Consulting Co., Ltd.

I-Min Lu

Wei-Chih Chang

I-Wei Wu

Yi-Chun Kao

Hsin-Hua Lin

Po-Li Shih

Chu-Jung Shih

Kuo-Sheng Lee

Kuo-Lung Fang

Chih-Lung Lee

Hui-Chu Lin

Gwo-Long Lin

Ying-Chieh Chen

Shyuan-Jeng Ho

Po-Fu Chen

Jr-Hong Chen

Chih-Fang Chen

Gwo-long Lin

Kuan-Hsien Jiang

Wun-Zong Chang

Hao-Ting Tien

Ting-Hui Huang

I-Wei Chen

Shih-Chang Chang

Hsin-An Cheng

Chin-Yuan Lin

An-Chou Chen

Chao-Chun Yang

Loganathan Murugan

A sensor using ultrasound to detect presence and nature of analyte includes an ultrasonic element and a receptor thereon. The ultrasonic element includes a first electrode, a second electrode facing and spaced apart from the first electrode, an insulating layer between the first electrode and the second electrode, and a vibrating film between the insulating layer and the first electrode. The vibrating film carries the first electrode. A cavity is formed between the vibrating film and the insulating layer. The receptor is on a side of the first electrode away from the second electrode. The receptor can combine with a target substance in a test analyte. When the first electrode and the second electrode are applied with different voltages, certain ultrasound frequencies are generated as the vibrating film vibrates, and the presence and weight of different target substances are indicated by the changes in resonance.

Sensor using ultrasound to detect target substance and detecting device using same

A device for transferring micro-devices from a holding device to a final surface, avoiding damage during the process and ensuring coplanar presentation onto the final surface, includes a first substrate on the holding device. The holding device carries at least one transfer substrate which itself carries a plurality of micro-devices. At least one buffering member is located between the first substrate and the transfer substrate. The buffering member provides a small range of buffering for the micro-devices during the transfer and also compensates for any slight unevenness when the micro-devices are laid on and bonded to the final surface. A method for transferring the micro-devices is also disclosed.

Device for transferring and integrating micro-devices and method of transfer

A LCD device defining a display area includes a color filter substrate, a thin film transistor (TFT) substrate facing the color filter substrate, a backlight module on a side of the TFT substrate away from the color filter substrate, a transparent cover on a side of the color filter substrate away from the TFT substrate, and a fingerprint sensor in the display area. The fingerprint sensor defines a fingerprint sensing area in the display area. The LCD device further includes a light emitting diode on a side of the transparent cover adjacent to the color filter substrate. The light emitting diode is configured to emit light toward the fingerprint sensing area of the transparent cover.

Liquid crystal display device having fingerprint sensor

A micro LED display panel which is transparent to ambient light includes a TFT substrate, a plurality of micro LEDs, a first insulating layer, and a second insulating layer. The TFT substrate includes a first surface and a second surface. The micro LEDs and the first insulating layer are on the first surface. The first insulating layer is transparent. The second insulating layer includes insulating units spaced from each other and made of a light absorbing material. Each insulating unit is on a side of the first insulating layer away from the TFT substrate and each micro LED is embedded in the first insulating layer and in one of insulating units. Regions of the TFT substrate not covered by the insulating layer are regions which allow light to pass through.

Transparent micro LED display panel

A backlight module for an LCD display includes backlight units. Each backlight unit includes a backplane unit, a first reflecting unit on the backplane unit, an LED on the backplane unit extending through the first reflecting unit, and a light guiding unit on a side of the LED and the first reflecting unit away from the backplane unit. The light guiding unit is transparent. Each backlight unit further includes a second reflecting unit on a side of the light guiding unit away from the backplane unit. The second reflecting unit includes at least one reflecting region and at least one transmitting region. The reflecting region reflects light; the transmitting region allows light to pass through. At least one backlight unit comprises a quantum dot layer.

Backlight module

A touch and/or display panel with minimal border area includes a first substrate with first and second opposite surfaces. The panel further comprises a film on the first surface and bent to the second surface, the film is flexible and wires are patterned into the film. The film comprises first and second ends, the first end is located on the first surface, and the second end is located on the second surface and a chip is formed on the second end. A method for making the panel is also disclosed.

Panel and method for manufacturing panel with minimal border area

An LCD display panel with increased screen-to-body ratio includes first and second substrates with a liquid crystal layer disposed between them. The first substrate includes a display portion and at least two edge portions. The second substrate includes a support portion, two extended portions, and a second extended portion. A size of the support portion is same as a size of the display portion. Each first extended portion corresponds to one edge portion. The second extended portion is extended from a side of the support portion and is bent away from the first substrate. Part of the second extended portion is disposed below the display portion, and the electronic elements to drive the display are disposed on surface of the second extended portion.

Liquid crystal display panel with narrow bezel

A micro LED display panel defines a display area and a border area surrounding the display area. The micro LED display panel includes a TFT array substrate, a plurality of micro LEDs on the TFT array substrate, a common electrode on the TFT array substrate, the common electrode covering and electrically coupling to all of the micro LEDs; a metal layer on a side of the common electrode away from the TFT array substrate and electrically coupling to the common electrode, and a black photoresist layer on a side of the metal layer away from the TFT array substrate. The black photoresist layer defines through holes. Each through hole extends through both the black photoresist layer and the metal layer and aligns with one micro LED. The metal layer and the black photoresist layer cover the display area and the border area.

Micro LED display panel with narrowed border area and method for making same

A thin film transistor array panel includes a first conductive layer () including a gate electrode; a channel layer () disposed over the gate; and a second conductive layer () disposed over the channel layer (). The second conductive layer () includes a multi-layered portion defining a source electrode () and a drain electrode (), which includes a first sub-layer (-), a second sub-layer (-), and a third sub-layer (-) sequentially disposed one over another. Both the third and the first sub-layers (--) include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer (-) is greater than that in the third sub-layer (-). The content ratio differentiation between the first and the third sub-layers (--) affects a lateral etch profile associated with a gap () generated in the second conductive layer () between the source and the drain electrodes (), where the associated gap () width in the third sub-layer (-) is wider than that in the first sub-layer (-).

Thin film transistor array panel and conducting structure

A conductive layer for a thin film transistor (TFT) array panel includes a multi-layered portion defining a source electrode and a drain electrode of a TFT device, and includes a first sub-layer, a second sub-layer, a third sub-layer, and at least one additional sub-layer. The third and the first sub-layers include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer is greater than that in the third sub-layer. An indium to zinc content ratio in the additional sub-layer is formulated between that in the first and the third sub-layers. The content ratio differentiation between the first and the third sub-layers affects a lateral etch profile associated with a gap generated in the second conductive layer between the source and the drain electrodes, where the associated gap width in the third sub-layer is wider than that in the first sub-layer.

A semiconductor device comprises a multi-layered structure disposed over a substrate () and defining a composite lateral etch profile. The multi-layered structure includes a lower sub-layer (-) disposed over the substrate () and comprising a metal oxide material that includes indium and zinc, the indium and zinc content in the lower sub-layer (-) substantially defining a first indium to zinc content ratio; a middle sub-layer (-) disposed over the lower sub-layer (-) and comprising a metal material; an upper sub-layer (-) disposed over the middle sub-layer (-) and comprising a metal oxide material that includes indium and zinc, the indium to zinc content in the upper sub-layer (-) substantially defining a second indium to zinc content ratio smaller than the first indium to zinc content ratio; and a lateral byproduct layer formed over the lateral etched surface, comprising substantially an metal oxide of the metal material in the middle sub-layer (-).

Thin film transistor array panel

An LCD device includes a TFT array substrate, a liquid crystal layer, and a plurality of photo spacers. The photo spacers are located inside the liquid crystal layer. The TFT array substrate includes a pixel electrode layer and an alignment layer. The alignment layer is arranged on the of TFT array substrate on the side near the liquid crystal layer. The pixel electrode layer is arranged on the alignment layer on the side far away from liquid crystal layer; the alignment layer includes a plurality of contact portion. The bottom of the photo spacers are holding with the contact portions. A plurality of block portion is adjacent to the contact portions. The block portion is a protrusion formed toward the color filter substrate with respect to the contact portion, so that the displacement of the photo spacers on the TFT array substrate can be limited.

Liquid crystal display panel

A semiconductor device comprises a multi-layered structure disposed over a substrate and defining a composite lateral etch profile. The multi-layered structure includes a lower sub-layer disposed over the substrate and comprising a metal oxide material that includes indium and zinc, the indium and zinc content in the bottom sub-layer substantially defining a first indium to zinc content ratio; a middle sub-layer disposed over the bottom sub-layer and comprising a metal material; an upper sub-layer disposed over the middle sub-layer and comprising a metal oxide material that includes indium and zinc, the indium to zinc content in the upper sub-layer substantially defining a second indium to zinc content ratio smaller than the first indium to zinc content ratio; and a lateral byproduct layer formed over the lateral etched surface, comprising substantially an metal oxide of the metal material in the middle sub-layer.

A thin film transistor array panel includes a first conductive layer including a gate electrode; a channel layer disposed over the gate; and a second conductive layer disposed over the channel layer. The second conductive layer includes a multi-layered portion defining a source electrode and a drain electrode, which includes a first sub-layer, a second sub-layer, and a third sub-layer sequentially disposed one over another. Both the third and the first sub-layers include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer is greater than that in the third sub-layer. The content ratio differentiation between the first and the third sub-layers affects a lateral etch profile associated with a gap generated in the second conductive layer between the source and the drain electrodes, where the associated gap width in the third sub-layer is wider than that that in the first sub-layer.

A conductive layer for a thin film transistor (TFT) array panel includes a multi-layered portion defining a source electrode and a drain electrode of a TFT device, and includes a first sub-layer, a second sub-layer, a third sub-layer, and at least one additional sub-layer. The third and the first sub-layers include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer is greater than that in the third sub-layer. An indium to zinc content ratio in the additional sub-layer is formulated between that in the first and the third sub-layers. The content ratio differentiation between the first and the third sub-layers affects a lateral etch profile associated with a gap generated in the second conductive layer between the source and the drain electrodes, where the associated gap width in the third sub-layer is wider than that that in the first sub-layer.

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Taipei, Taiwan

I-Min Lu