United Microelectronics Corp.

I-Lun Hung

Kun-Ju Li

Po-Cheng Huang

Chun-Tsen Lu

Yu-Ting Li

Wu-Sian Sie

Fu-Shou Tsai

Wen-Chin Lin

Chih-Hsun Lin

Jen-Chieh Lin

Tzu-Hsiang Hung

Shih-Ming Lin

Lan-Ping Chang

A manufacturing method of a semiconductor device is provided. The manufacturing method includes the following steps. A plurality of fin structures are formed in a first area and a second area of a substrate. A first density of the fin structures in the first area is lower than a second density of the fin structures in the second area. A gate dielectric layer is formed on the fin structures. An amorphous silicon layer is formed on the gate dielectric layer and the fin structures in the first area and the second area. Part of the amorphous silicon layer which is disposed in the first area is annealed to form a crystalline silicon layer by a laser. The crystalline silicon layer disposed in the first area and the amorphous silicon layer disposed in the second area are polished.

Manufacturing method of semiconductor device

A semiconductor process includes the following steps. A dielectric layer is formed on a substrate, where the dielectric layer has at least a dishing from a first top surface. A shrinkable layer is formed to cover the dielectric layer, where the shrinkable layer has a second top surface. A treatment process is performed to shrink a part of the shrinkable layer according to a topography of the second top surface, thereby flattening the second top surface.

Semiconductor process

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Tainan, Taiwan

I-Lun Hung