National Sun Yat-sen University of Kaohsiung

I-Kai Lo

Ming-Chi Chou

Yu-Chi Hsu

Wen-Yuan Pang

Cheng-Hung Shih

Chia-Ho Hsieh

Ying-Chieh Wang

Cheng-Da Tsai

Chen-Chi Yang

A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650&#xb0; C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.

Method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid

This invention discloses a light emitting element to solve the problem of lattice mismatch and inequality of electron holes and electrons of the conventional light emitting elements. The light emitting element comprises a gallium nitride layer, a gallium nitride pyramid, an insulating layer, a first electrode and a second electrode. The gallium nitride pyramid contacts with the gallium nitride layer, with a c-axis of the gallium nitride layer opposite in direction to a c-axis of the gallium nitride pyramid, and with an M-plane of the gallium nitride layer parallel to an M-plane of the gallium nitride pyramid, with broken bonds at the mounting face of the gallium nitride layer and the larger end face of the gallium nitride pyramid welded with each other, with the gallium nitride layer and the gallium nitride pyramid being used as a p-type semiconductor and an n-type semiconductor respectively.

Light emitting element with an enhanced electroluminescence effect

An III-nitride epitaxial structure and a method for manufacturing the same are disclosed. The III-nitride epitaxial structure includes a gallium nitride layer, an indium gallium nitride layer, and an indium nitride layer. The gallium nitride layer includes an M-plane gallium nitride surrounding a c-plane gallium nitride thereof. The indium gallium nitride layer is arranged on the gallium nitride layer. The indium gallium nitride layer includes an M-plane indium gallium nitride surrounding a c-plane indium gallium nitride thereof. The indium nitride layer is arranged on the indium gallium nitride layer. The indium nitride layer includes an M-plane indium nitride surrounding a c-plane indium nitride thereof. The c-plane gallium nitride, the c-plane indium gallium nitride, and the c-plane indium nitride are stacked each other to form a neck portion that is connected to a thin c-plane indium nitride disk which is spaced from the M-plane indium nitride by a gap.

III-nitride epitaxial structure and method for manufacturing the same

An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

Epitaxy structure of a light emitting element having III-nitride quantum wells

An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

III-nitride quantum well structure and a light-emitting unit using the same

An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed.

III-nitride quantum well structure, a method for producing the same, and a light-emitting unit using the same

A homo-material heterophased quantum well includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is sandwiched between the first and third structural layers. The first structural layer, second structural layer and third structural layer are formed by growing atoms of a single material in a single growth direction. The energy gap of the second structural layer is smaller than that of the first and third structural layers.

Homo-material heterophased quantum well

A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlOand a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.

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Kaohsiung, Taiwan

I-Kai Lo