Samsung Electronics Co., Ltd.

I-Hun Song

Joon-Chul Goh

Sang-Wook Kim

Sang-jin Park

Wook Su Lee

Richard Joseph Gambino

Cheol-Gon Lee

Young-Soo Park

Wan-jun Park

Young Ju Kim

Tae-wan Kim

Hyun-Jo Kim

Jeong-Hee Park

Kee-won Kim

Sang-Hun Jeon

Jae-Chul Park

Sung-Ho Park

Yong-Woo Jeon

Tae-Wan Kim

Kyu-Mann Lee

Ji-Hoon Ahn

Sun-Il Kim

Ji-Hyun Hur

Taek-dong Lee

Byeong-kook Park

Seok-Jae Chung

Seung-Eon Ahn

Seung-Hyup Lee

Chang-Jung Kim

A method for forming an MTJ structure suitable for use in a MRAM device having a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium, osmium, palladium or their oxides and having reduced surface roughness to improve the hysteresis loop characteristics of the resulting MTJ structure. The bottom electrode layer may also combine the functions of both the seeding layer and bottom electrode of the conventional two-layer structure, thereby simplifying the manufacturing process.

Magnetic tunnel junction structures and methods of fabrication

A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

Method for manufacturing magneto-resistive random access memory

A magnetic RAM (MRAM) using a thermo-magnetic spontaneous Hall effect includes a MOS transistor formed on a substrate; a heating layer formed above the MOS transistor and connected to a source region of the MOS transistor; a memory layer having a data write area to which data is written, the data write area being formed on the heating means; a bit line formed on the data write area; an upper insulating film formed on the bit line and the memory layer; and a write line formed on the upper insulating film so that a magnetic field necessary for writing data is generated in at least the data write area of the memory layer. The MRAM writes or reads data using the fact that a spontaneous Hall voltage greatly differs according to the magnetization state of a memory layer, thereby providing the device a high data sensing margin.

Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM

Magneto-resistive random access memory

A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.

Magnetic random access memory and method of operating the same

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Seongnam, South Korea

I-Hun Song