United Microelectronics Corp.

I-Hsin Sung

Ping-Chia Shih

Ching-Hua Yeh

Ssu-Yin Liu

Che-Hao Kuo

A method for fabricating a physically unclonable function (PUF) device includes the steps of first defining a PUF cell region on a substrate and then performing a process to form a defect on the PUF cell region. Preferably, the formation of the defect could be accomplished by forming a shallow trench isolation (STI) on the substrate, forming a gate material layer on the substrate and the STI, patterning the gate material layer to form a first gate material layer and a second gate material layer, and then forming an epitaxial layer between and connecting the first gate material layer and the second gate material layer.

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Tainan, Taiwan

I-Hsin Sung