National Taiwan University

Opto Tech Corporation

I-Chun Cheng

Chih-Ming Lai

Lung-Han Peng

Pi-Tai Chou

Jiun-Yun Li

Cheng-Che Hsu

Ming-Yi Yan

Haoming Chang

Sheng-Ping Liang

Ting-Jui Wu

Jhih-You Lu

Jian-Zhang Chen

Hsien-Chih Huang

Yun-Shiuan Li

Hsiao-Wei Liu

Yue-Lin Huang

A method and apparatus for treating graphene raw material by plasma, and an application thereof are provided. After treated by the plasma, the graphene raw material will have a special structure and characteristic.

Apparatus and method for treating graphene using plasma and application thereof

A single memory cell has the functions of a storage element and a selector. The memory cell includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on the tunneling structure. The tunneling structure is a stack structure including a first material layer, a second material layer and a third material layer. By adjusting a bias voltage that is applied to the P-type layer and the N-type layer, the tunneling structure is controlled to be in the amorphous state or the crystalline state. Consequently, the memory cell has the memorizing and storing functions. The memory cell has the P-type layer, the tunneling structure and the N-type layer. By adjusting the bias voltage, the function of the selector is achieved.

Memory cell with functions of storage element and selector

Growing community of inventors

Taipei, Taiwan

I-Chun Cheng