Industrial Technology Research Institute

I-Cherng Chen

Tung-Sheng Shih

Ren-Der Jean

Nai-Hao Kuo

Chun-Te Chuang

Ming-Hann Tzeng

Pi-Guey Su

Yih-Shiaw Huang

Chiu-Fong Liaw

Miao-Ju Chueh

Ping-Ping Tsai

James C Ku

Chun-Hsun Chu

Meng-Song Yin

Hsin-Hung Pan

Jung-Hao Wang

Jian-Hong Wu

Szu-Ju Li

Pai-Hao Wu

Chien-Hsiung Tai

Pin-Chou Li

Hong-Ci Syu

Yung-Kuan Tseng

Hui-Yu Cho

Chor-Jye Huang

Wen-Yuan Tsai

Yi-Shiao Huang

Arthur Lin

An oxidizing gas detection method and an apparatus thereof are provided for trace oxidizing gas detection. The detection method includes the following steps. First, perform an electroreduction reaction and a photoreduction reaction simultaneously to a metal oxide in which nanoconductors are distributed. Next, stop the electroreduction reaction and the photoreduction reaction, and read a resistance of the reduced metal oxide by applying a first pulse-width modulation signal. Next, provide an oxidizing gas to the reduced metal oxide, and photo-catalyze a redox reaction between the oxidizing gas and the reduced metal oxide. Next, read a resistance of the oxidized metal oxide by applying a second pulse-width modulation signal. Next, converse a concentration of the oxidizing gas according to a ratio of the resistance of the oxidized metal oxide and the resistance of the reduced metal oxide.

Oxidizing gas detection method and apparatus thereof

A physiological signal measuring method and a physiological signal measuring device are provided. The physiological signal measuring method includes the following steps: A first inputting signal having a first frequency, a second inputting signal having a second frequency and a third inputting signal having a third frequency are respectively inputted to at least two electrode sheets attached on a skin. A first impedance value corresponding to the first inputting signal, a second impedance value corresponding to the second inputting signal and a third impedance value corresponding to the third inputting signal are respectively measured. An interference impedance between the electrode sheets and the skin is obtained according to the first frequency, the second frequency, the third frequency, the first impedance value, the second impedance value and the third impedance value. A measured physiological signal is corrected according to the interference impedance to obtain a corrected physiological signal.

Physiological signal measuring method and physiological signal measuring device

A gas detecting system, device and method use a variable pulse voltage waveform to increase the temperature of a detecting unit of the gas detecting system so it reacts with gas molecules from a particular space, and outputs a sensing signal. A processing unit of the gas detecting system then performs calculations on the sensing signal, such that an analysis unit may determine the presence of a target gas in the particular space, and further the composition and concentration of the target gas within the particular space, thus providing a detection that is accurate, rapid and convenient.

Gas detecting system, device and method

A gas sensor is provided. The substrate of the gas sensor has a first surface, a second surface and a cavity. The cavity has an opening at the first surface. An insulating film is disposed on the first surface and covers the opening. A heating unit is embedded in the insulating film and located above the opening. An electrode pair is disposed on the insulating film and electrically separated from the heating unit. A buffer layer is disposed on the insulating film and located above the heating unit. The buffer layer is electrically connected to the electrode pair, and at least part of an orthogonal projection of the buffer layer on the first surface is located on the substrate next to the opening. The gas sensing layer is disposed on the buffer layer and has a nano-catalyst therein.

Gas sensor

A gas sensor is disclosed, which includes two separate metal electrodes on a surface of a substrate and a semiconductor thin film deposited on the surface of the substrate and connecting the two metal electrodes. The semiconductor thin film contains zinc oxide or a mixed oxide of zinc and indium, and the zinc oxide or the mixed oxide of zinc and indium are in the form of nanowires which constitute a gas-sensing surface of the semiconductor thin film. The nanowires have a diameter of 50-900 nm. The present invention also discloses a method for detecting the presence of a NOx gas.

Gas sensor with nanowires of zinc oxide or indium/zinc mixed oxides and method of detecting NOx gas

A pulse-type gas concentration measurement system and a method of pulse-type gas concentration measurement in a specific environment. When the sensor is located at a specific position, a variable pulse-modulated voltage is sent to the sensor, so that the sensor outputs a first signal to the processing device. The processing device compares the first signal to the chemical matter characteristics signals to determine the composition and concentration of respective constituents in the gas, and determines a detection voltage according to the first signal. Then, a square-wave pulse with the detection voltage is sent intermittently to the sensor, so that the sensor outputs a second signal to the processing device. The processing device compares the second signal to the chemical matter characteristics signal to determine the concentration variation of each respective constituent of the gas.

Pulse-type gas concentration measurement system and method thereof

A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate. The crystal phase adjusting buffer includes, for example, nitride and oxide layers on a silicon substrate, or a gallium nitride epitaxial layer on a sapphire substrate, and is used as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.

Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof

An intelligent gas identification system and method of gas identification in a specific environment. The intelligent gas identification system has a sensor, a pulse power supply module, and a processing device in which a plurality of chemical matter characteristics signals is stored. When the sensor is disposed in the specific environment, the pulse power supply module sends a variable pulse-amplitude-modulated voltage to the sensor, so that the sensor outputs a signal to the processing device. The processing device compares the outgoing signal to the chemical matter characteristics signals to determine an identification result for the gas.

Intelligent gas identification system and method thereof

A gas sensor that has its heater and sensing layer on opposite sides of the substrate. The gas sensor includes a buffer layer separating the gas-sensing layer from the substrate to improve mechanical strength and electrical properties. The heater is preferably formed of nickel paste and is provided on the back of the substrate.

Gas sensor having its heater and sensing layer on opposite sides of its

A method of fabricating a gas sensor which comprises a substrate; a buffer layer coated on the substrate; at least one gas sensing layer arranged on the buffer layer; a pair of electrodes disposed on the gas sensing layer; and a catalytic layer coated on the gas sensing layer. A spin coating process is performed, using centrifugal force, to form the layers which are thin and evenly deposited on the substrate. The gas sensing layer of the gas sensor is formed before forming the electrodes of the same such that the heat treatment thereto can be carried out at 800.degree. C. which is much higher than the conventional temperature of 600.degree. C. The bonding of the gas sensing layer to the substrate is thereby much stronger than the conventional gas sensor.

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Hsinchu, Taiwan

I-Cherng Chen