Taiwan Semiconductor Manufacturing Comp. Ltd.

I-Chang Shih

Ying-Chou Cheng

Ru-Gun Liu

Feng-Yuan Chiu

Chiu Hsiu Chen

Yi-Jie Chen

Bing-Syun Yeh

Chih-Ming Lai

Shih-Ming Chang

Chun-Yu Lin

Chung-Min Fu

Ping-Chieh Wu

Tzu-Chin Lin

Chia-Cheng Chang

Jen-Chieh Lo

Yung-Fong Lu

The present disclosure provides a method. The method includes obtaining an integrated circuit (IC) layout. The method includes providing a polishing process simulation model. The method includes performing a lithography pattern check (LPC) process to the IC layout. The LPC process is performed at least in part using the polishing process simulation model. The method includes detecting, in response to the LPC process, possible problem areas on the IC layout. The method includes modifying the polishing process simulation model. The method includes repeating the performing the LPC process and the detecting the possible problem areas using the modified polishing process simulation model.

Topography-aware lithography pattern check

A method and computer program are provided for analyzing a set of layers within an integrated circuit design to determine a set of critical points for each layer within the set of layers. The critical points are based at least in part on manufacturer specific process parameters. The method includes assigning a critical point value to each of the critical points within each set of critical points, analyzing a path through the integrated circuit design across multiple integrated circuit design layers, and determining a sum of critical point values of each critical point along the path.

Chip level critical point analysis with manufacturer specific data

According to an exemplary embodiment, a method of forming a substrate pattern having an isolated region and a dense region is provided. The method includes the following operations: forming a first photoresist layer over the substrate; exposing the first photoresist layer through a first mask corresponding to the isolated region; developing the first photoresist layer to form a first pattern; forming a second photoresist layer over the substrate and the first pattern; exposing the second photoresist layer through a second mask corresponding to the substrate pattern; developing the second photoresist layer to form a second pattern; and etching the first pattern and the substrate to form the substrate pattern in the isolated region and the dense region.

Method of forming substrate pattern

A method for characterizing a three-dimensional surface profile of a semiconductor workpiece is provided. In this method, the three-dimensional surface profile is imaged from a normal angle to measure widths of various surfaces in a first image. The three-dimensional surface is also imaged from a first oblique angle to re-measure the widths of the various surfaces in a second image. Based on differences in widths of corresponding surfaces for first and second images, a feature height and sidewall angle are determined for the three-dimensional profile.

3D image profiling techniques for lithography

Integrated circuit design techniques are disclosed. In some methods, a target layout design having a geometric pattern thereon is received. A set of fast-bias contour (FBC) rules is applied to the target layout design to provide an electronic photomask having FBC-edits. The FBC-edits differentiate the electronic photomask from the target layout design, and the FBC rules are applied without previously applying optical proximity correction (OPC) to the target layout design. A lithography process check is performed on the electronic photomask to determine whether a patterned integrated circuit layer, which is to be manufactured based on the electronic photomask, is expected to be in conformance with the geometric pattern of the target layout design.

Model based simulation method with fast bias contour for lithography process check

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Zhubei, Taiwan

I-Chang Shih