Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Hélène Jacquinot

Maud Vinet

Jean Charbonnier

Yann-Michel Niquet

Candice Thomas

Thomas Bedecarrats

A spin qubit quantum device includes a semiconductor portion having a first region disposed between two second regions; a first control gate disposed in direct contact with the first region and configured to control a minimum potential energy level in the first region, and disposed in direct contact with a first face of the semiconductor portion; and second electrostatic control gates, each disposed in direct contact with one of the second regions and configured to control a maximum potential energy level in one of the second regions, and disposed in direct contact with a second face, opposite to the first face, of the semiconductor portion, The first gate is not aligned with the second gates.

Device comprising electrostatic control gates distributed on two opposite faces of a semiconductor portion

An electronic device for storing, controlling and manipulating electron or hole spin based semiconductor qubits, the device including an electrically insulating layer and on a front face of the insulating layer, a trapping structure for electrons or holes which includes: a channel portion including at least one layer portion of semiconductor material, as well as a plurality of gates distributed for trapping at least one electron or hole in the channel portion, and on the back side of the insulating layer, an electrical track extending parallel to the insulating layer, for generating an oscillating magnetic field acting on the at least one electron or hole trapped in the trapping structure.

Growing community of inventors

Grenoble, France

Hélène Jacquinot