Sigma-Aldrich Co. LLC

Hywel Owen Davies

Rajesh Odedra

Peter Nicholas Heys

Paul Williams

Fuquan Song

Andrew Kingsley

Thomas Leese

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein:

Methods of atomic layer deposition using titanium-based precursors

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: 

Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C-C-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C-C-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C-C-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C-C-alkyl.

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Mold, United Kingdom

Hywel Owen Davies