Samsung Electronics Co., Ltd.

Hyunsung Shin

Hohyun Shin

Taeyoung Oh

Kyungsoo Ha

Jongcheol Kim

Sukhan Lee

Youngcheon Kwon

Haesuk Lee

Kwangil Park

Dongmin Kim

Jongwan Kim

Sanghyuk Kwon

Youngsoo Sohn

Hyungi Kim

Myeongo Kim

A semiconductor memory device includes a memory cell array, a data input/output (I/O) buffer, an I/O gating circuit and a control logic circuit. The memory cell array includes a plurality of sub array blocks arranged in a first direction and a second direction. The data I/O buffer exchanges user data with a memory controller through I/O pads. The I/O gating circuit is connected to the data I/O buffer through data buses and connected to the memory cell array through data I/O lines, and programs mapping relationship between the sub array blocks and the I/O pads, based on a mapping control signal such that uncorrectable errors that are detected by an error correction code engine in the memory controller are reduced. The control logic circuit generates the mapping control signal based on identifier information indicating a type of a central processing unit of the memory controller.

Semiconductor memory devices

A memory device includes a memory bank including a plurality of banks, each including a memory cell array; a calculation logic including a plurality of processor-in-memory (PIM) circuits arranged in correspondence to the banks, each of the plurality of PIM circuits performing calculation processing using at least one selected from data provided from a host and information read from a corresponding bank among the banks; and a control logic configured to control a memory operation on the memory bank in response to a command and/or an address, each received from the host, or to control the calculation logic to perform the calculation processing, wherein reading operations are respectively performed in parallel on the banks for the calculation processing, offsets having different values are respectively configured for the banks, and information is read from different positions in respective memory cell arrays of the banks and provided to the PIM circuits.

Memory device performing parallel calculation processing, operating method thereof, and operating method of memory controller controlling the memory device

A semiconductor memory device including a memory cell array and an error relief circuit may be provided. The memory cell array includes plurality of memory cells which store data and are coupled to a plurality of word-lines and a plurality of bit-lines. The error relief circuit includes a replacement memory. The error relief circuit receives a command and an address from an external device, stores a first data associated with a first address in the replacement memory in response to detecting a sequence of the consecutively received commands with respect to the first address, and inputs/outputs the first data associated with the first address through the replacement memory.

Semiconductor memory device and memory system including the same

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Seoul, South Korea

Hyunsung Shin