Samsung Electronics Co., Ltd.

HyunSuk Chun

Soojae Park

Boin Noh

Chul-Yong Park

Jeong-Won Yoon

Baikwoo Lee

Jong-Woo Park

Jeongwon Yoon

Semiconductor devices include an interlayer insulating layer on a substrate, a first capacitor structure in the interlayer insulating layer, and a conductive layer including a terminal pad on the interlayer insulating layer. The first capacitor structure includes at least one first laminate, the at least one first laminate including a first lower electrode, a first capacitor insulating layer, and a first upper electrode sequentially on the substrate. The terminal pad does not overlap with the first capacitor structure.

Semiconductor devices

Provided is a semiconductor package and a method of making same, including a first package substrate; a first semiconductor chip mounted on the first package substrate and having a first pad and a second pad, wherein the first pad is provided on a top of the first semiconductor chip and the second pad is provided on a bottom of the first semiconductor chip, the bottom being an opposite surface of the top; and a clad metal provided on the first pad and electrically connecting the first semiconductor chip to one of a second semiconductor chip and second package substrate provided on the top of the first semiconductor chip.

Semiconductor package and method of manufacturing the same

A semiconductor package includes a package substrate, a first semiconductor chip mounted on the package substrate, a second semiconductor chip mounted on the first semiconductor chip to expose at least a portion of the first semiconductor chip, and a stress-relieving structure provided at an edge of the first semiconductor chip and configured to relieve stress applied between the first semiconductor chip and the second semiconductor chip.

Semiconductor package

Growing community of inventors

Yongin-si, South Korea

HyunSuk Chun